Abstract: A connecting device which can be arranged relative to a photovoltaic module for the purpose of electrically connecting a plurality of photovoltaic modules to one another and/or to an inverter device comprising at least a housing. The housing includes a first housing element and a second housing element; first connection devices for electrical connection to the photovoltaic module arranged in the first housing element; and second connection devices for electrical connection to a further connecting device or to the inverter device of a semiconductor circuit having at least one semiconductor component arranged in the second housing element. The connecting device further includes first contact devices, which are associated with the first housing element, and second contact devices, which are associated with the second housing element. The semiconductor circuit arrangement can be electrically connected to the first connection devices.

Abstract: A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. The underfill has a matrix formed from a preceramic polymer.

Abstract: A power semiconductor module comprising a substrate, a circuit formed thereon and having a plurality of conductor tracks that are electrically insulated from one another and power semiconductor components arranged on the conductor tracks. The latter are connected in a circuit-conforming manner by a connection device, which has an alternating layer sequence of at least two electrically conductive layers with at least one electrically insulating layer between them. In this case, the substrate has a first sealing area, which uninterruptedly encloses the circuit. Furthermore, this sealing area is connected to an assigned second sealing area on a layer of the connection device by a connection layer. According to the invention, this power semiconductor module is produced by applying pressure to the substrate, to the power semiconductor components and to the connection device.

Abstract: A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer—thicker than the first—of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Abstract: A connecting device which can be arranged relative to a photovoltaic module for the purpose of electrically connecting a plurality of photovoltaic modules to one another and/or to an inverter device comprising at least a housing. The housing includes a first housing element and a second housing element; first connection devices for electrical connection to the photovoltaic module arranged in the first housing element; and second connection devices for electrical connection to a further connecting device or to the inverter device of a semiconductor circuit having at least one semiconductor component arranged in the second housing element. The connecting device further includes first contact devices, which are associated with the first housing element, and second contact devices, which are associated with the second housing element. The semiconductor circuit arrangement can be electrically connected to the first connection devices.

Abstract: A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. The underfill has a matrix formed from a preceramic polymer.

Abstract: A power semiconductor module comprising a substrate, a circuit formed thereon and having a plurality of conductor tracks that are electrically insulated from one another and power semiconductor components arranged on the conductor tracks. The latter are connected in a circuit-conforming manner by a connection device, which has an alternating layer sequence of at least two electrically conductive layers with at least one electrically insulating layer between them. In this case, the substrate has a first sealing area, which uninterruptedly encloses the circuit. Furthermore, this sealing area is connected to an assigned second sealing area on a layer of the connection device by a connection layer. According to the invention, this power semiconductor module is produced by applying pressure to the substrate, to the power semiconductor components and to the connection device.

Abstract: A power semiconductor module is presented. The power semiconductor module has a substrate, a composite film, and a power semiconductor component between the substrate and the composite film. The composite film has a thin circuit-structured logic metal layer and a thick circuit-structured power metal layer and between them a thin electrically insulating plastic film. The composite film includes contact nubs, which provide bonding to the power semiconductor component. Feedthrough holes are provided between the logic metal layer and the power metal layer. The plastic film in the region of the respective through-plated hole includes a recess in a region that is free of the logic metal layer. A segment of a flexible thin wire extends through the free region of the logic metal layer and through the recess in the plastic film and is bonded to the logic metal layer and the power metal layer by means of bonding sites.

Abstract: A connecting structure comprising a connecting device for electrically conductive connection to at least one semiconductor component and a filler. The connecting device is a film composite comprising at least two electrical films with an insulating film therebetween. The electrically conductive films are inherently structured and thus form conductor tracks. At least one semiconductor component is assigned to at least one cutout in the respective conductive film, wherein the filler is situated between the connecting device and the assigned semiconductor component.

Abstract: A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer—thicker than the first—of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Abstract: A frequency converter is presented. The frequency converter includes a circuit module, which is interconnected to a circuit board and is connected to a heat sink. For attaining a frequency converter in a modular version with optimal cooling properties, the circuit module has a flexible, electrically insulating plastic film, which on one side has a circuit-structured logic metal layer and on the opposite side has a circuit-structured power metal layer that is contacted with a contact edge to a peripheral portion of the circuit board. The flexible circuit module protrudes at an angle away from the circuit board. Power semiconductor chips are contacted on the power metal layer. A substrate is secured to the heat sink and is embodied with a circuit structure for contacting the power semiconductor chips.

Abstract: An ultrasonic welding head for ultrasonic welding connection of a chip to a substrate is described, in which the welding parameters have a negligibly slight variation or are constant. This is attained by providing that a static friction element that increases the static friction relative to the chip to be welded is secured to the welding die of the ultrasonic welding head, and has a flat frictional end face. The static friction element is preferably formed by a ceramic chip.

Abstract: A power semiconductor module is presented. The power semiconductor module has a substrate, a composite film, and a power semiconductor component between the substrate and the composite film. The composite film has a thin circuit-structured logic metal layer and a thick circuit-structured power metal layer and between them a thin electrically insulating plastic film. The composite film includes contact nubs, which provide bonding to the power semiconductor component. Feedthrough holes are provided between the logic metal layer and the power metal layer. The plastic film in the region of the respective through-plated hole includes a recess in a region that is free of the logic metal layer. A segment of a flexible thin wire extends through the free region of the logic metal layer and through the recess in the plastic film and is bonded to the logic metal layer and the power metal layer by means of bonding sites.

Abstract: The invention provides a power semiconductor module including a power converter module with an improved configuration technology that minimizes or eliminates the need for a positive bonding (soldering/adhesive) connection between a power semiconductor element and a contact surface of a substrate. The present invention includes a housed or encapsulated power semiconductor element with a pre-secured connecting element that reduces manufacturing time and costs, while improving performance capability in a decreased size.

Abstract: The invention provides a power semiconductor module including a power converter module with an improved configuration technology that minimizes or eliminates the need for a positive bonding (soldering/adhesive) connection between a power semiconductor element and a contact surface of a substrate. The present invention includes a housed or encapsulated power semiconductor element with a pre-secured connecting element that reduces manufacturing time and costs, while improving performance capability in a decreased size.

Abstract: The circuit arrangement comprises a mounting plate carrying at least one preferably chip-form component and contact surfaces electrically conductively connected to the component by connecting elements. The mounting plate is carried on a cooling member and is pressed thereagainst by a pressing arrangement. The pressing arrangement has a mounting element, with an elastically yielding cushion element on the side which is towards the cooling member, to press against the electrical component and/or in the vicinity thereof against the mounting plate in electrically insulated relationship therewith.