Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: An integrated circuit is provided including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, a plurality of cells, each cell having a transistor device, formed over the buried oxide layer, a plurality of gate electrode lines running through the cells and providing gate electrodes for the transistor devices of the cells, and a plurality of tap cells configured for electrically contacting the semiconductor bulk substrate and arranged at positions different from positions below or above the plurality of cells having the transistor devices.

Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: An integrated circuit is provided including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, a plurality of cells, each cell having a transistor device, formed over the buried oxide layer, a plurality of gate electrode lines running through the cells and providing gate electrodes for the transistor devices of the cells, and a plurality of tap cells configured for electrically contacting the semiconductor bulk substrate and arranged at positions different from positions below or above the plurality of cells having the transistor devices.

Abstract: The soft error rate (SER) detector circuit presented here can be used to measure SER in combinatorial logic devices caused by radiation. The SER detector circuit includes a plurality of detector arrays coupled in series, and each having a plurality of SER test structures coupled in series. Each of the SER test structures includes a plurality of detector elements coupled in series. Each of the SER test structures is configured to detect single event transients (SETs) in a first operating mode and single event upsets (SEUs) in a second operating mode. The SER detector circuit also has control logic elements to control operation of the plurality of detector arrays.

Abstract: A semiconductor-based test device includes a plurality of testing clusters and a pseudorandom global stimulus source coupled to the testing clusters. Each testing cluster includes a plurality of data registers and logic elements configured to perform random logic functions for generating test data for the plurality of data registers. The pseudorandom global stimulus source generates a pseudorandom binary stimulus for the logic elements. At least some of the plurality of testing clusters are coupled together to support inter-cluster fan-out and fan-in of data register output.

Abstract: A semiconductor-based test device includes a plurality of testing clusters and a pseudorandom global stimulus source coupled to the testing clusters. Each testing cluster includes a plurality of data registers and logic elements configured to perform random logic functions for generating test data for the plurality of data registers. The pseudorandom global stimulus source generates a pseudorandom binary stimulus for the logic elements. At least some of the plurality of testing clusters are coupled together to support inter-cluster fan-out and fan-in of data register output.

Abstract: The soft error rate (SER) detector circuit presented here can be used to measure SER in combinatorial logic devices caused by radiation. The SER detector circuit includes a plurality of detector arrays coupled in series, and each having a plurality of SER test structures coupled in series. Each of the SER test structures includes a plurality of detector elements coupled in series. Each of the SER test structures is configured to detect single event transients (SETs) in a first operating mode and single event upsets (SEUs) in a second operating mode. The SER detector circuit also has control logic elements to control operation of the plurality of detector arrays.

Abstract: In a transaction-based verification environment for complex semiconductor devices, enhanced verification efficiency may be achieved by providing a transaction to machine code translator and an appropriate interface that enables access of the translated machine code instruction by a CPU under test. In this manner, transaction-based test environments may have a high degree of re-usability and may be used for verification on block level and system level.

Abstract: In a transaction-based verification environment for complex semiconductor devices, enhanced verification efficiency may be achieved by providing a transaction to machine code translator and an appropriate interface that enables access of the translated machine code instruction by a CPU under test. In this manner, transaction-based test environments may have a high degree of reusability and may be used for verification on block level and system level.

Abstract: In a transaction-based verification environment for complex semiconductor devices, enhanced verification efficiency may be achieved by providing a transaction to machine code translator and an appropriate interface that enables access of the translated machine code instruction by a CPU under test. In this manner, transaction-based test environments may have a high degree of re-usability and may be used for verification on block level and system level.