Patents by Inventor Christian Heidorn

Christian Heidorn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon Vacancy Defect Reduction Method for SiC
    Publication number: 20170309484
    Abstract: A method of defect reduction for a SiC layer includes activating dopants disposed in the SiC layer, depositing a carbon-rich layer on the SiC layer after activating the dopants, tempering the carbon-rich layer so as to form graphite on the SiC layer, and diffusing carbon from the graphite into the SiC layer. Carbon diffused from the graphite fills carbon vacancies in the SiC layer.
    Type: Application
    Filed: April 22, 2016
    Publication date: October 26, 2017
    Inventors: Mihai Draghici, Romain Esteve, Craig Arthur Fisher, Gerald Unegg, Tobias Hoechbauer, Christian Heidorn