Patents by Inventor Christian Hennesthal

Christian Hennesthal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8653624
    Abstract: Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: February 18, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Christian Hennesthal, Oliver Aubel, Jens Poppe, Holger Pagel, Andreas Kurz
  • Publication number: 20130307114
    Abstract: Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.
    Type: Application
    Filed: July 29, 2013
    Publication date: November 21, 2013
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Jens Poppe, Oliver Aubel, Christian Hennesthal, Holger Pagel, Andreas Kurz
  • Publication number: 20120153479
    Abstract: In metallization systems of complex semiconductor devices, an intermediate interface layer may be incorporated into the interconnect structures in order to provide superior electromigration performance. To this end, the deposition of the actual fill material may be interrupted at an appropriate stage and the interface layer may be formed, for instance, by deposition, surface treatment and the like, followed by the further deposition of the actual fill metal. In this manner, the grain size issue, in particular at lower portions of the scaled inter-connect features, may be addressed.
    Type: Application
    Filed: July 25, 2011
    Publication date: June 21, 2012
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Oliver Aubel, Christian Hennesthal, Frank Feustel, Thomas Werner
  • Publication number: 20110156858
    Abstract: Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.
    Type: Application
    Filed: October 25, 2010
    Publication date: June 30, 2011
    Inventors: Jens Poppe, Oliver Aubel, Christian Hennesthal, Holger Pagel, Andreas Kurz
  • Publication number: 20110049727
    Abstract: In a complex metallization system, the probability of dielectric breakdown may be reduced by vertically separating a critical area of high electric field strength and an area of reduced dielectric strength of the interlayer dielectric material. For this purpose, the interlayer dielectric material may be recessed after forming the metal regions and/or the metal regions may be increased in height and the corresponding recess may be refilled with an appropriate dielectric material.
    Type: Application
    Filed: August 11, 2010
    Publication date: March 3, 2011
    Inventors: Oliver Aubel, Frank Feustel, Christian Hennesthal