Patents by Inventor Christian Hobert

Christian Hobert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELF-BIASING TRANSISTOR STRUCTURE AND AN SRAM CELL HAVING LESS THAN SIX TRANSISTORS
    Publication number: 20090026521
    Abstract: By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.
    Type: Application
    Filed: September 29, 2008
    Publication date: January 29, 2009
    Inventors: Frank Wirbeleit, Manfred Horstmann, Christian Hobert
  • Self-biasing transistor structure and an SRAM cell having less than six transistors
    Patent number: 7442971
    Abstract: By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: October 28, 2008
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Frank Wirbeleit, Manfred Horstmann, Christian Hobert
  • Self-biasing transistor structure and an SRAM cell having less than six transistors
    Publication number: 20060022282
    Abstract: By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.
    Type: Application
    Filed: January 28, 2005
    Publication date: February 2, 2006
    Inventors: Frank Wirbeleit, Manfred Horstmann, Christian Hobert