Abstract: Light-emitting device assemblies are described. The assemblies can include a light-emitting device, an optional package supporting the light-emitting device, and a base supporting the light-emitting device or the optional package. The base may include a protrusion extending in the direction of the light-emitting device. The thermally conductive pathway can extend between the light-emitting device and the base, such that the thermally conductive pathway includes the protrusion. Other assemblies can include a light-emitting device, a support substrate, and a layer of dielectric material on the support substrate. An aperture may be defined by the dielectric material through which a thermally conductive material (e.g., a portion of the support substrate) can extend to facilitate thermal communication between the support substrate and the light-emitting device. Thermal communication between the support substrate and the light-emitting device can increase the removal of thermal energy generated by the device.

Abstract: Light-emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: Light-emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: Light-emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: A method for testing an optical chip, while the optical chip is still on a wafer, utilizing an optical probe, includes the steps of creating an access point on the wafer adjacent the optical chip. The optical chip having a waveguide having an axis. A portion of the waveguide is removed to form the access point such that light exiting the planar optical waveguide is directed in a direction substantially different from the axis of the waveguide. An optical probe is placed along a propagation path of the exiting light to optically couple the optical probe and optical chip.

Abstract: A method for testing an optical chip, while the optical chip is still on a wafer, utilizing an optical probe, includes the steps of creating an access point on the wafer adjacent the optical chip. Inserting a probe at the access point to optically couple the optical probe and optical chip. The optical probe includes at least a first optical waveguide for changing the direction of input light at the probe to optically couple with the optical chip at the access point.

Abstract: An external gain system includes a gain source, a laser coupler, one or more mode converters, a high index contrast waveguide, and a filter structure fabricated on either high or low index contrast waveguides. The filter structure defines the external cavity with the front facet of the laser diode. An external cavity laser is further integrated with one or more functional blocks to perform a specific function. A multiplexer is integrated with the external cavity laser array, where the waveguide ends of the external cavity serve as an input to the multiplexer, to form an integrated WDM transmitter. The output of the transmitter, if fabricated on high index contrast waveguide, is then coupled to a low index waveguide or fiber matched waveguide by using a mode converter. The gain system can be configured to become a linear optical amplifier and can also be configured as a low cost wavelength converter.

Abstract: A method for testing an optical chip, while the optical chip is still on a wafer, utilizing an optical probe, includes the steps of creating an access point on the wafer adjacent the optical chip. Inserting a probe at the access point to optically couple the optical probe and optical chip. The optical probe includes at least a first optical waveguide for changing the direction of input light at the probe to optically couple with the optical chip at the access point.

Abstract: A method for testing an optical chip, while the optical chip is still on a wafer, utilizing an optical probe, includes the steps of creating an access point on the wafer adjacent the optical chip. The optical chip having a waveguide having an axis. A portion of the waveguide is removed to form the access point such that light exiting the planar optical waveguide is directed in a direction substantially different from the axis of the waveguide. An optical probe is placed along a propagation path of the exiting light to optically couple the optical probe and optical chip.

Abstract: An optical device includes a planar waveguide having a core region at least partially surrounded by a cladding, wherein the waveguide includes of a photosensitive germanium-doped silicon oxynitride (Ge:SiON) or germanium-doped silicon nitride (Ge:SiN). An optical device is formed by providing a photosensitive layer comprised of Ge:SiON or Ge:SiN and selectively irradiating the photosensitive layer at a wavelength of light to which the photosensitive material is sensitive, such that an optical feature having a refractive index different than that of the non-irradiated photosensitive layer is formed.

Abstract: A tunable waveguide microresonator device includes a core layer and a cladding layer surrounding said core. The cladding including regions surrounding the core where an evanescent field resides and at least one material of the core and the cladding is comprised of a photosensitive material. The resonance position of the microresonator is adjusted by irradiating the device with uv light.