Patents by Inventor Christian Hässler

Christian Hässler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FABRICATION OF IGZO OXIDE TFT ON HIGH CTE, LOW RETARDATION POLYMER FILMS FOR LDC-TFT APPLICATIONS
    Publication number: 20160218220
    Abstract: The present invention provides a TFT on a polymer substrate and a method for producing the TFT. The TFT is, due to its characteristics, particularly suited for applications as backplane in LCD displays and solar cell devices.
    Type: Application
    Filed: September 25, 2014
    Publication date: July 28, 2016
    Inventors: Eric Chuan Whatt Ou, Sivaramakrishan SANKARAN, Khine Myat Sint MA, Christian HÄßLER, Axel SCHMIDT
  • Solar modules with a transparent polyurethane front side and a process for producing same
    Patent number: 7049803
    Abstract: Solar modules in which the front side is composed of transparent polyurethane are made by RIM, injection molding and casting processes and combinations thereof.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: May 23, 2006
    Assignee: Bayer Aktiengesellschaft
    Inventors: Karl-Heinz Dörner, Hubert Ehbing, Christian Hässler, Jürgen Ramthun, Gunther Stollwerck, Robert Eiben, Michael Niedermeyer, Peter Schuster
  • Silicon nitride based substrate for semi-conductor components
    Patent number: 6916560
    Abstract: The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.
    Type: Grant
    Filed: November 22, 2001
    Date of Patent: July 12, 2005
    Assignee: H. C. Starck Ceramics GmbH & Co. KG
    Inventors: Gerhard Wötting, Peter Woditsch, Christian Hässler, Gunther Stollwerck
  • Multicrystalline silicon having a low proportion of active grain borders
    Patent number: 6576831
    Abstract: Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.
    Type: Grant
    Filed: November 14, 2001
    Date of Patent: June 10, 2003
    Assignee: Deutsche Solar GmbH
    Inventors: Peter Woditsch, Gunther Stollwerck, Christian Hässler, Wolfgang Koch
  • Silicon with structured oxygen doping, its production and use
    Patent number: 6294726
    Abstract: The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.
    Type: Grant
    Filed: June 9, 2000
    Date of Patent: September 25, 2001
    Assignee: Bayer Aktiengesellschaft
    Inventors: Christian Hässler, Hans-Ulrich Höfs, Wolfgang Koch, Siegfried Thurm, Otwin Breitenstein