Abstract: A RF weldable film is provided. The film has outer layer including a PVDF copolymer or an alpha-olefin polymer and backing layer including a TPU copolymer. The film may have a gas barrier layer attached to the backing layer. The backing layer may include an EVOH copolymer. A method of making such a film is also provided. Containers made from such film are further provided.

Abstract: The present application describes a process for the preparation of titanium-based compounds having an anatase type structure with cationic vacancies arising from a partial substitution of oxygen atoms by fluorine atoms and hydroxyl groups. Electrochemically active materials comprising the titanium-based compounds for use in lithium-ion battery electrodes are also described.

Abstract: A RF weldable tubing is provided. The tubing has inner layer including a PVDF copolymer, or an ethylene alpha-olefin homopolymer, or an ethylene alpha-olefin polymer that may include a grafted polyethylene. The tubing may have an inter gas barrier layer sandwiched between the outer layer and an outermost layer including a TPU copolymer. The inter gas barrier layer may include an EVOH copolymer. A method of making such a tubing is also provided.

Abstract: The present application describes a process for the preparation of titanium-based compounds having an anatase type structure with cationic vacancies arising from a partial substitution of oxygen atoms by fluorine atoms and hydroxyl groups. Electrochemically active materials comprising the titanium-based compounds for use in lithium-ion battery electrodes are also described.

Abstract: A RF weldable tubing is provided. The tubing has inner layer including a PVDF copolymer, or an ethylene alpha-olefin homopolymer, or an ethylene alpha-olefin polymer that may include a grafted polyethylene. The tubing may have an inter gas barrier layer sandwiched between the outer layer and an outermost layer including a TPU copolymer. The inter gas barrier layer may include an EVOH copolymer. A method of making such a tubing is also provided.

Abstract: A RF weldable film is provided. The film has outer layer including a PVDF copolymer or an alpha-olefin polymer and backing layer including a TPU copolymer. The film may have a gas barrier layer attached to the backing layer. The backing layer may include an EVOH copolymer. A method of making such a film is also provided. Containers made from such film are further provided.

Abstract: A RF weldable tubing is provided. The tubing has inner layer including a PVDF copolymer, or an ethylene alpha-olefin homopolymer, or an ethylene alpha-olefin polymer that may include a grafted polyethylene. The tubing may have an inter gas barrier layer sandwiched between the outer layer and an outermost layer including a TPU copolymer. The inter gas barrier layer may include an EVOH copolymer. A method of making such a tubing is also provided.

Abstract: A RF weldable film is provided. The film has outer layer including a PVDF copolymer or an alpha-olefin polymer and backing layer including a TPU copolymer. The film may have a gas barrier layer attached to the backing layer. The backing layer may include an EVOH copolymer. A method of making such a film is also provided. Containers made from such film are further provided.

Abstract: A RF weldable tubing is provided. The tubing has inner layer including a PVDF copolymer, or an ethylene alpha-olefin homopolymer, or an ethylene alpha-olefin polymer that may include a grafted polyethylene. The tubing may have an inter gas barrier layer sandwiched between the outer layer and an outermost layer including a TPU copolymer. The inter gas barrier layer may include an EVOH copolymer. A method of making such a tubing is also provided.

Abstract: A RF weldable film is provided. The film has outer layer including a PVDF copolymer or an alpha-olefin polymer and backing layer including a TPU copolymer. The film may have a gas barrier layer attached to the backing layer. The backing layer may include an EVOH copolymer. A method of making such a film is also provided. Containers made from such film are further provided.

Abstract: A gateway (AG1) for transmission of voice over a core data network (DN) of a New Generation telecommunication Network (NGN). The gateway comprises a legacy exchange (LE), an integrated gateway (IG) and a signaling termination and translation device (STT) operating according to a signaling standard. The legacy exchange (LE) is a reused Public Switched Telecommunication Network [PSTN], whereby the gateway is relatively cheaper than dedicated gateways for NGN networks.

Abstract: The gain and current consumption of a power amplifier are adjusted while maintaining amplified output signal linearity. Where linearity and low power consumption are maintained for the amplifier by controllable shunting of an input signal amplitude and by providing a predetermined bias signal to the amplifier circuit in a precalibrated manner. A mapping circuit is disposed for receiving a control signal and for providing the predetermined bias signal to the amplifier circuit in the precalibrated manner. The mapping circuit is either internally provided within the same circuit as the power amplifier, or externally.

Abstract: The gain and current consumption of a power amplifier are adjusted while maintaining amplified output signal linearity. Where linearity and low power consumption are maintained for the amplifier by controllable shunting of an input signal amplitude and by providing a predetermined bias signal to the amplifier circuit in a precalibrated manner. A mapping circuit is disposed for receiving a control signal and for providing the predetermined bias signal to the amplifier circuit in the precalibrated manner. The mapping circuit is either internally provided within the same circuit as the power amplifier, or externally.

Abstract: A two stage amplifier for a portable or cellular phone is disclosed which is manufactured using a fast BiCMOS process suach as SiGe. A shunt circuit controlled by a switch is provided between a base of one of the amplifying transistors and a DC terminal to prevent it from operating in a Class B mode of operation when it is intended for the amplifier to be switched off.

Abstract: This invention relates to compounds of formula Q--O--R--O--Q wherein Q represents a substituted or unsubstituted 2-(2-hydroxybenzyl) phenyl group, and R is a residue of a di- or tri-basic, organic or inorganic acid. Compounds in accordance with the invention can be used as stabilizers for plastics materials, in particular to provide them with thermal stability and stability against ultra violet light. The low volatilities of these compounds compared with the analogous di-phenols Q--O--H render them of particular value.