Patents by Inventor Christian Krenn

Christian Krenn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10350346
    Abstract: A pharmaceutical product includes a delivery syringe comprising a plastic receptacle and an oxygen-tight envelope which envelopes the delivery syringe in an oxygen-tight manner, wherein the plastic receptacle is filled with an oxygen-sensitive active pharmaceutical ingredient fluid and an inner surface of the plastic receptacle is siliconized at least in sections.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: July 16, 2019
    Assignee: Fresenius Kabi Austria GmbH
    Inventors: Andreas Kerschbaumer, Roland Gorges, Patricia Grigoleit, Christian Krenn, Johann Schloegl
  • Patent number: 9728480
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: August 8, 2017
    Assignee: Infineon Technologies AG
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Silvana Fister, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Patent number: 9698247
    Abstract: A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes a decrease or an increase of a lattice constant of the first semiconductor zone. The second dopant causes one or both of hardening of the first semiconductor zone and an increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: July 4, 2017
    Assignee: Infineon Technologies AG
    Inventors: Hans-Joachim Schulze, Manfred Kotek, Johannes Baumgartl, Markus Harfmann, Christian Krenn, Thomas Neidhart
  • Publication number: 20170182240
    Abstract: A pharmaceutical product includes a delivery syringe comprising a plastic receptacle and an oxygen-tight envelope which envelopes the delivery syringe in an oxygen-tight manner, wherein the plastic receptacle is filled with an oxygen-sensitive active pharmaceutical ingredient fluid and an inner surface of the plastic receptacle is siliconized at least in sections.
    Type: Application
    Filed: December 13, 2016
    Publication date: June 29, 2017
    Inventors: Andreas Kerschbaumer, Roland Gorges, Patricia Grigoleit, Christian Krenn, Johann Schloegl
  • Patent number: 9522222
    Abstract: An application arrangement for a medicinal substance fluid includes an application syringe with a plastic container, wherein the plastic container is filled with an oxygen-sensitive medicinal substance fluid and an oxygen-tight cover which surrounds the application syringe in oxygen-tight manner.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: December 20, 2016
    Assignee: Fresenius Kabi Austria GmbH
    Inventors: Andreas Kerschbaumer, Roland Gorges, Patricia Grigoleit, Christian Krenn, Johann Schloegl
  • Publication number: 20160197164
    Abstract: A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes a decrease or an increase of a lattice constant of the first semiconductor zone. The second dopant causes one or both of hardening of the first semiconductor zone and an increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.
    Type: Application
    Filed: March 16, 2016
    Publication date: July 7, 2016
    Inventors: Hans-Joachim Schulze, Manfred Kotek, Johannes Baumgartl, Markus Harfmann, Christian Krenn, Thomas Neidhart
  • Patent number: 9306010
    Abstract: A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: April 5, 2016
    Assignee: Infineon Technologies AG
    Inventors: Hans-Joachim Schulze, Manfred Kotek, Johannes Baumgartl, Markus Harfmann, Christian Krenn, Thomas Neidhart
  • Publication number: 20150273133
    Abstract: An application arrangement for a medicinal substance fluid includes an application syringe with a plastic container, wherein the plastic container is filled with an oxygen-sensitive medicinal substance fluid and an oxygen-tight cover which surrounds the application syringe in oxygen-tight manner.
    Type: Application
    Filed: October 2, 2013
    Publication date: October 1, 2015
    Applicant: Fresenius Kabi Deutschland GmbH
    Inventors: Andreas Kerschbaumer, Roland Gorges, Patricia Grigoleit, Christian Krenn, Johann Schloegl
  • Publication number: 20150235917
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Silvana Fister, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Patent number: 8991159
    Abstract: An exhaust gas system of an internal combustion engine, in particular for a vehicle, includes an exhaust gas conveying duct, at least one insert disposed in the exhaust gas conveying duct for purifying the exhaust gas, an injection system disposed upstream of the insert in the flow path and a turbulizer disposed between the injection system and the insert. A flow rectifier is provided in the exhaust gas conveying duct between the turbulizer and the insert.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: March 31, 2015
    Assignee: Bayerische Motoren Werke Aktiengesellschaft
    Inventor: Christian Krenn
  • Publication number: 20140117511
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Application
    Filed: October 30, 2012
    Publication date: May 1, 2014
    Applicant: Infineon Technologies AG
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Fister Schlemitz Silvana, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Patent number: 8603910
    Abstract: In various embodiments, a method of processing a contact pad may include providing a contact pad, a topmost layer of the contact pad containing aluminum or an aluminum alloy, at least part of the topmost layer of the contact pad being exposed; subjecting the contact pad to a thermally activated atmosphere containing water or reactive components of water.
    Type: Grant
    Filed: January 13, 2012
    Date of Patent: December 10, 2013
    Assignee: Infineon Technologies AG
    Inventors: Marco Koitz, Guenter Zieger, Christian Krenn, Franz Kleinbichler, Guenther Zoth, Karl Mayer
  • Publication number: 20130276435
    Abstract: An exhaust gas system of an internal combustion engine, in particular for a vehicle, includes an exhaust gas conveying duct, at least one insert disposed in the exhaust gas conveying duct for purifying the exhaust gas, an injection system disposed upstream of the insert in the flow path and a turbuliser disposed between the injection system and the insert. A flow rectifier is provided in the exhaust gas conveying duct between the turbuliser and the insert.
    Type: Application
    Filed: May 3, 2013
    Publication date: October 24, 2013
    Inventor: Christian KRENN
  • Publication number: 20130240902
    Abstract: A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.
    Type: Application
    Filed: March 14, 2012
    Publication date: September 19, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Hans-Joachim Schulze, Manfred Kotek, Johannes Baumgartl, Markus Harfmann, Christian Krenn, Thomas Neidhart
  • Publication number: 20130180945
    Abstract: In various embodiments, a method of processing a contact pad may include providing a contact pad, a topmost layer of the contact pad containing aluminum or an aluminum alloy, at least part of the topmost layer of the contact pad being exposed; subjecting the contact pad to a thermally activated atmosphere containing water or reactive components of water.
    Type: Application
    Filed: January 13, 2012
    Publication date: July 18, 2013
    Applicant: Infineon Technologies AG
    Inventors: Marco Koitz, Guenter Zieger, Christian Krenn, Franz Kleinbichler, Guenther Zoth, Karl Mayer