Abstract: An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.

Abstract: An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.

Abstract: An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.

Abstract: An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.

Abstract: The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.

Abstract: The invention relates to an ion-sensitive field effect transistor, comprising a gate (36) consisting of carbon nitride. The carbon nitride gate (36) is highly resistant to aggressive substances to be measured and also exhibits good adhesive properties. In addition, the ion-sensitive field effect transistor has high long-term stability and negligible drift. Said ion-sensitive field effect transistor can be produced in a method that uses CMOS-compatible planar technology.

Abstract: The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.

Abstract: A circuit layout for measuring ion concentrations in solutions using ion-sitive field effect transistors is provided. The circuit layout makes it possible to represent the threshold voltage difference of two ISFETs directly and independently of technological tolerances, operationally caused parameter fluctuations, and ambient influences. The circuit layout includes two measuring or test amplifiers, with in each case two differently or identically sensitive ISFETs and two identical FETs. The ISFETs and FETs are connected in such a manner that at the output of the first measuring amplifier occurs the difference of the mean value of the two ISFET threshold voltages and the FET threshold voltage and at the output of the second measuring amplifier occurs the difference of the two ISFET threshold voltages. The output of the first amplifier is connected to the common reference electrode of the four ISFETs.