Abstract: A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient ?1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient ?2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×?1<?2<1.1×?1 at T=300 K, wherein Vbr2<Vbr1.

Abstract: A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient ?1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient ?2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×?1<?2<1.1×?1 at T=300 K, wherein Vbr2<Vbr1.

Abstract: A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient ?1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient ?2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×?1<a2<1.1×?1 at T=300 K, wherein Vbr2<Vbr1.