Patents by Inventor Christian Leo Kloc

Christian Leo Kloc has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8124444
    Abstract: A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: February 28, 2012
    Assignees: Alcatel Lucent, The Trustees of Columbia University
    Inventors: Christian Leo Kloc, Arthur Penn Ramirez, Woo-Young So
  • Publication number: 20100330737
    Abstract: A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.
    Type: Application
    Filed: September 3, 2010
    Publication date: December 30, 2010
    Applicants: Lucent Technologies Inc., The Trustees of Columbia University
    Inventors: Christian Leo Kloc, Arthur Penn Ramirez, Woo-Young So
  • Patent number: 7821000
    Abstract: An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.
    Type: Grant
    Filed: February 1, 2008
    Date of Patent: October 26, 2010
    Assignees: Alcatel-Lucent USA Inc., The Trustees of Columbia University
    Inventors: Christian Leo Kloc, Arthur Penn Ramirez, Woo-Young So
  • Publication number: 20090194762
    Abstract: A method includes forming a contiguous semiconducting region that includes polyaromatic molecules. The region is heated to a temperature above room temperature in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.
    Type: Application
    Filed: February 1, 2008
    Publication date: August 6, 2009
    Applicant: Alcatel-Lucent Technologies Inc.
    Inventors: Christian Leo Kloc, Arthur Penn Ramirez, Woo-Young So
  • Publication number: 20090148979
    Abstract: A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.
    Type: Application
    Filed: February 11, 2009
    Publication date: June 11, 2009
    Applicants: Alcatel-Lucent USA, Incorporated, Columbia University
    Inventors: Christian Leo Kloc, Oleg Mitrofanov, Theo Max Siegrist, John Magnus Wikberg, David V. Lang