Patents by Inventor Christian Mares

Christian Mares has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11196390
    Abstract: Power amplifier devices and methods for fabricating power amplifier devices containing frontside heat extraction structures are disclosed. In embodiments, the power amplifier device includes a substrate, a radio frequency (RF) power die bonded to a die support surface of the substrate, and a frontside heat extraction structure further attached to the die support surface. The frontside heat extraction structure includes, in turn, a transistor-overlay portion in direct thermal contact with a frontside of the RF power die, a first heatsink coupling portion thermally coupled to a heatsink region of the substrate, and a primary heat extraction path extending from the transistor-overlay portion to the first heatsink coupling portion. The primary heat extraction path promotes conductive heat transfer from the RF power die to the heatsink region and reduce local temperatures within a transistor channel of the RF power die during operation of the power amplifier device.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: December 7, 2021
    Assignee: NXP USA, Inc.
    Inventors: Edward Christian Mares, Lakshminarayan Viswanathan, David James Dougherty
  • Publication number: 20210336585
    Abstract: Power amplifier devices and methods for fabricating power amplifier devices containing frontside heat extraction structures are disclosed. In embodiments, the power amplifier device includes a substrate, a radio frequency (RF) power die bonded to a die support surface of the substrate, and a frontside heat extraction structure further attached to the die support surface. The frontside heat extraction structure includes, in turn, a transistor-overlay portion in direct thermal contact with a frontside of the RF power die, a first heatsink coupling portion thermally coupled to a heatsink region of the substrate, and a primary heat extraction path extending from the transistor-overlay portion to the first heatsink coupling portion. The primary heat extraction path promotes conductive heat transfer from the RF power die to the heatsink region and reduce local temperatures within a transistor channel of the RF power die during operation of the power amplifier device.
    Type: Application
    Filed: April 23, 2020
    Publication date: October 28, 2021
    Inventors: Edward Christian Mares, Lakshminarayan Viswanathan, David James Dougherty
  • Publication number: 20100186191
    Abstract: Device for large diameter bag port comprises a diameter reduction spacer with a first circular orifice of the diameter equal to the diameter of the port bag. This first orifice is facing towards the bag port. This device comprises also a second orifice facing towards the outside of the containment in the direction opposite to the first orifice, this second orifice being elongated in shape, particularly ovoid.
    Type: Application
    Filed: September 9, 2008
    Publication date: July 29, 2010
    Applicant: AREVA NC
    Inventors: Christian Mares, Pierre Riba