Patents by Inventor Christian Martorano

Christian Martorano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9039921
    Abstract: A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The ?d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: May 26, 2015
    Assignee: Drexel University
    Inventors: Wei-Heng Shih, Hongyu Luo, Christian Martorano, Wan Y. Shih
  • Publication number: 20100224818
    Abstract: A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The ?d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
    Type: Application
    Filed: May 20, 2010
    Publication date: September 9, 2010
    Applicant: DREXEL UNIVERSITY
    Inventors: Wei-Heng Shih, Hongyu Luo, Christian Martorano, Wan Y. Shih
  • Patent number: 7744773
    Abstract: A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The ?d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: June 29, 2010
    Assignee: Drexel University
    Inventors: Wei-Heng Shih, Hongyu Luo, Christian Martorano, Wan Y. Shih
  • Publication number: 20060223691
    Abstract: A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The ?d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
    Type: Application
    Filed: March 29, 2006
    Publication date: October 5, 2006
    Inventors: Wei-Heng Shih, Hongyu Luo, Christian Martorano, Wan Shih