Abstract: An installation for the plasma processing of a continuous material (1) includes an evacuatable discharge chamber (3a, 3b) and a device for setting a gas atmosphere in the discharge chamber (3a, 3b). The device for setting a gas atmosphere includes a prechamber system (10, 11, 12) and a postchamber system (2), with sluice openings between the chambers (2, 3a, 3b, 10, 11, 12). The continuous material (1) is guided with low friction through the prechamber system (10, 11, 12) and the postchamber system (2). The device for setting a gas atmosphere includes a recovery system wherein gas can be recirculated from a postchamber (2a . . . 2k) into a prechamber (10, 11, 12) and/or postchamber (2a . . . 2k) having a higher pressure level so that processing is effected in a gas-saving manner.

Abstract: The invention relates to an installation for the plasma processing of a continuous material (1). Said installation comprises at least one evacuatable discharge chamber (3a, 3b), through which the continuous material (1) can be conveyed continuously, a device for setting a gas atmosphere in the at least one discharge chamber (3a, 3b), wherein the device for setting a gas atmosphere comprises a prechamber system (10, 11, 12) and a postchamber system (2), with sluice openings being provided between the chambers (2, 3a, 3b, 10, 11, 12) of said systems, through which openings the continuous material (1) can be guided with low friction through the prechamber system (10, 11, 12) and the postchamber system (2). The device for setting a gas atmosphere comprises a recovery system wherein gas can be recirculated from a postchamber (2a . . . 2k) into a prechamber (10, 11, 12) and/or postchamber (2a . . . 2k) having a higher pressure level.