Patents by Inventor Christian Pfahler
Christian Pfahler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230099054Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Inventors: Michael X. Yang, Christian Pfahler, Alexandr Cosceev
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Patent number: 11521847Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.Type: GrantFiled: April 29, 2020Date of Patent: December 6, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD., MATTSON TECHNOLOGY, INC.Inventors: Michael X. Yang, Christian Pfahler, Alexandr Cosceev
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Patent number: 11255606Abstract: Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.Type: GrantFiled: December 21, 2016Date of Patent: February 22, 2022Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Christian Pfahler, Joseph Cibere
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Publication number: 20200402811Abstract: Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.Type: ApplicationFiled: September 4, 2020Publication date: December 24, 2020Inventors: Alexandr Cosceev, Markus Hagedorn, Christian Pfahler
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Publication number: 20200350217Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.Type: ApplicationFiled: July 23, 2020Publication date: November 5, 2020Inventors: Markus Lieberer, Christian Pfahler, Markus Hagedorn, Michael vanAbbema, Alexandr Cosceev
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Publication number: 20200350158Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.Type: ApplicationFiled: April 29, 2020Publication date: November 5, 2020Inventors: Michael X. Yang, Christian Pfahler, Alexandr Cosceev
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Patent number: 10770309Abstract: Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.Type: GrantFiled: December 14, 2016Date of Patent: September 8, 2020Assignees: MATTSON TECHNOLOGY, INC., BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Alexandr Cosceev, Markus Hagedorn, Christian Pfahler
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Patent number: 10727140Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.Type: GrantFiled: December 13, 2016Date of Patent: July 28, 2020Assignees: MATTSON TECHNOLOGY, INC., BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Markus Lieberer, Christian Pfahler, Markus Hagedorn, Michael vanAbbema, Alexandr Cosceev
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Patent number: 10402291Abstract: A checking device for a data preparation unit, including a preparation element for preparing sensor data for a data transmission; and a comparator for comparing the sensor data with the prepared sensor data; a fault of the data preparation unit being detected in the event that the prepared sensor data do not match the sensor data.Type: GrantFiled: September 18, 2015Date of Patent: September 3, 2019Assignee: Robert Bosch GmbHInventors: Matthias Kalisch, Ali Abbas Husaini, Christian Pfahler
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Publication number: 20170337111Abstract: A checking device for a data preparation unit, including a preparation element for preparing sensor data for a data transmission; and a comparator for comparing the sensor data with the prepared sensor data; a fault of the data preparation unit being detected in the event that the prepared sensor data do not match the sensor data.Type: ApplicationFiled: September 18, 2015Publication date: November 23, 2017Applicant: Robert Bosch GmbHInventors: Matthias Kalisch, Ali Abbas Husaini, Christian Pfahler
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Publication number: 20170194163Abstract: Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.Type: ApplicationFiled: December 14, 2016Publication date: July 6, 2017Inventors: Alexandr Cosceev, Markus Hagedorn, Christian Pfahler
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Publication number: 20170191759Abstract: Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.Type: ApplicationFiled: December 21, 2016Publication date: July 6, 2017Inventors: Christian Pfahler, Joseph Cibere
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Publication number: 20170194220Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.Type: ApplicationFiled: December 13, 2016Publication date: July 6, 2017Inventors: Markus Lieberer, Christian Pfahler, Markus Hagedorn, Michael vanAbbema, Alexandr Cosceev