Abstract: A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of ?/??>1000, means for the broadband spectral filtering ?/??<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

Abstract: A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of ?/??>1000, means for the broadband spectral filtering ?/??<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

Abstract: The present invention relates to a semiconductive polymer composition comprising: —an ethylene copolymer (A) comprising methyl(meth)acrylate co-monomer units, wherein the ethylene copolymer (A) has a melt temperature of 80° C. or below, and—carbon black, wherein the ethylene copolymer (A) is produced in a autoclave high pressure reactor or in a multi-feed tubular reactor; to a semiconductive polymer composition comprising—an ethylene copolymer (A) comprising methyl(meth)acrylate, comonomer units; and—carbon black, wherein ethylene copolymer (A) is characterized in that the fraction obtained in the first fractionation step (fraction 1) in the fractionation method of ethylene copolymer (A) as described herein, is present in an amount of not more than 40 wt.

Abstract: The invention relates to a cable having a conductor surrounded by at a least one polymer layer having a polymer composition of the invention which has a polymer component and optionally a carbon black (CB) component, to a production process of the cable and to a polymer composition of the invention which has a polymer component and optionally a carbon black (CB) component and which is for use in a cable layer.

Abstract: A polyethylene moulding composition having a multimodal molecular weight distribution, having a density according to ISO 1183 at 23° C. in the range of 920 to 960 kg/m3 and an MFR190/2 according to ISO 1133 in the range of 0.

Abstract: The invention relates to a semiconductive polyolefin composition comprising, an olefin polymer (A) comprising epoxy-groups; a conductive filler; and at least one crosslinking agent (B) which accelerates the crosslinking reaction of epoxy-groups.

Abstract: The present invention relates to a semiconductive polymer composition comprising:—an ethylene copolymer (A) comprising methyl(meth)acrylate co-monomer units, wherein the ethylene copolymer (A) has a melt temperature of 80 ° C. or below, and—carbon black, wherein the ethylene copolymer (A) is produced in a autoclave high pressure reactor or in a multi-feed tubular reactor; to a semiconductive polymer composition comprising—an ethylene copolymer (A) comprising methyl(meth)acrylate, comonomer units; and—carbon black, wherein ethylene copolymer (A) is characterized in that the fraction obtained in the first fractionation step (fraction 1) in the fractionation method of ethylene copolymer (A) as described herein, is present in an amount of not more than 40 wt.

Abstract: A polyethylene moulding composition having a multimodal molecular weight distribution, having a density according to ISO 1183 at 23° C. in the range of 920 to 960 kg/m3 and an MFR190/2 according to ISO 1133 in the range of 0.

Abstract: The invention relates to a cable comprising a conductor surrounded by at a least one polymer layer comprising a polymer composition of the invention which comprises a polymer component and optionally a carbon black (CB) component, to a production process of the cable and to a polymer composition of the invention which comprises a polymer component and optionally a carbon black (CB) component and which is for use in a cable layer.