Abstract: Power semiconductor arrangement and method for producing it. One embodiment provides a power semiconductor module. The power semiconductor module has a baseplate with an electrically conductive structure, a housing and a connection element. The connection element is led out from the housing generally perpendicular to the baseplate and is fixed to the housing, has a first connection configured for making contact with the electrically conductive structure, and has a second connection for making electrical contact with a circuit carrier.

Abstract: In a method and a corresponding apparatus for controlling and monitoring the vacuum brazing of power components and SMD components, in which the temperature of the process is controlled using an open thermocouple, which is arranged separate from the furnace heating and is integrated in a base plate serving as a heat buffer, the temperature of the process is monitored and measured directly at the point of contact between brazing material and component. The uniformity of the temperature distribution during the process is measured by means of a contactless optical measuring system.