Abstract: The invention relates to a composite body, wherein at least one functional component is integrated into a shaped product, and to a method for producing the same. The shaped product can especially be an implant, a prosthesis, an industrial component or a multifunctionally useful sensor platform for the monitoring of materials, components and/or structural systems.

Abstract: The invention relates to a composite body, wherein at least one functional component is integrated into a shaped product, and to a method for producing the same. The shaped product can especially be an implant, a prosthesis, an industrial component or a multifunctionally useful sensor platform for the monitoring of materials, components and/or structural systems.

Abstract: A mask set for the production of integrated circuit chips, wherein a first mask has first features that form inner cell regions and a second mask has second features that form outer non-cell regions, so that the first and second masks do no expose a same region of a semiconductor wafer. An exposure system includes the mask set with an aperture device to fade out partial regions of the first features during exposure of the wafer by a light source. Furthermore, the mask set is used in a method of exposing a wafer for producing integrated circuit chips.

Abstract: The structure size of a structure (100) is measured by forming an auxiliary measured value (Dx?, Dy?). A calibration measured value (Px?, Py?) is determined on the basis of a calibration structure (110), which comprises at least two structure elements (140) at a distance from one another, including at least the measured value sum of the width (By?) of one of the two structure elements (140) and the distance (Ay?) between the two structure elements (140). The calibration measured value (Px?, Py?) and a predetermined calibration preset value (Px, Py), which relates to the calibration structure (110), result in the determination of a calibration factor (C, Cx, Cy). The auxiliary measured value (Dx?, Dy?) is corrected using the calibration factor (C, Cx, Cy) in order to form the structure size measured value (Dx,k; Dy,k).

Abstract: A measuring position for finding a structural element for measuring a characteristic dimension, for instance, the critical dimension CD, which element is about to be formed on a mask, is inserted as second data information into an exchange file containing the circuit layout in a hierarchical configuration of first data information or cells representing the structural elements. To prevent the second data information, which are virtual structural elements, from being incorporated in the control instructions for mask exposure, like the first data information, as structural elements that are to be formed, the second data information does not include an allocation of a geometric shape to the measuring position, or a shape that is allocated thereto has the transparency of the background, so that there is no contrast during the exposure. The second data information can be inserted as allocated to a plane that is not converted into a control instruction.

Abstract: The structure size of a structure (100) is measured by forming an auxiliary measured value (Dx?, Dy?). A calibration measured value (Px?, Py?) is determined on the basis of a calibration structure (110), which comprises at least two structure elements (140) at a distance from one another, including at least the measured value sum of the width (By?) of one of the two structure elements (140) and the distance (Ay?) between the two structure elements (140). The calibration measured value (Px?, Py?) and a predetermined calibration preset value (Px, Py), which relates to the calibration structure (110), result in the determination of a calibration factor (C, Cx, Cy). The auxiliary measured value (Dx?, Dy?) is corrected using the calibration factor (C, Cx, Cy) in order to form the structure size measured value (Dx,k; Dy,k).

Abstract: A mask, in particular a photomask, for the production of semiconductor devices, wherein a region of the mask that is assigned to at least two, preferably all, semiconductor devices to be produced side by side on a wafer and to be exposed by means of the mask is provided completely with a layout structure. Furthermore, the invention relates to a method for the production of semiconductor devices by making use of such a mask for wafer exposure, wherein partial regions of the mask are faded out during exposure of the wafer.

Abstract: A measuring position for finding a structural element for measuring a characteristic dimension, for instance, the critical dimension CD, which element is about to be formed on a mask, is inserted as second data information into an exchange file containing the circuit layout in a hierarchical configuration of first data information or cells representing the structural elements. To prevent the second data information, which are virtual structural elements, from being incorporated in the control instructions for mask exposure, like the first data information, as structural elements that are to be formed, the second data information does not include an allocation of a geometric shape to the measuring position, or a shape that is allocated thereto has the transparency of the background, so that there is no contrast during the exposure. The second data information can be inserted as allocated to a plane that is not converted into a control instruction.

Abstract: Fourier transformations are used to calculate a power spectrum of an image of an integrated circuit. The distance between periodic structures is determined from the first refraction maximum, which represents the reciprocal of the distance between the periodic structures. This enables performance of a simple method for calculating the distances between the periodic structures on integrated circuits or photomasks.

Abstract: An apparatus and method for imaging and scanning masks for semiconductor production includes placing a scanning instrument having a probe at a position to scan a layer side of a mask with the probe, placing an optical microscope on a side of the mask opposite the layer side at a position to image a detail of the mask from the side of the mask opposite the layer side, positioning the scanning instrument and the optical microscope relative to each other such that the optical microscope images the probe and the mask simultaneously, and laterally displacing the mask between and relative to the scanning instrument and the optical microscope to permit selection of an imaged detail of the mask while a relative position between the scanning instrument and the optical microscope is maintained. A selected detail of the mask is imaged and/or scanned.

Abstract: Fourier transformations are used to calculate a power spectrum of an image of an integrated circuit. The distance between periodic structures is determined from the first refraction maximum, which represents the reciprocal of the distance between the periodic structures. This enables performance of a simple method for calculating the distances between the periodic structures on integrated circuits or photomasks.

Abstract: An apparatus and method for imaging and scanning masks for semiconductor production includes placing a scanning instrument having a probe at a position to scan a layer side of a mask with the probe, placing an optical microscope on a side of the mask opposite the layer side at a position to image a detail of the mask from the side of the mask opposite the layer side, positioning the scanning instrument and the optical microscope relative to each other such that the optical microscope images the probe and the mask simultaneously, and laterally displacing the mask between and relative to the scanning instrument and the optical microscope to permit selection of an imaged detail of the mask while a relative position between the scanning instrument and the optical microscope is maintained. A selected detail of the mask is imaged and/or scanned.