Patents by Inventor Christian Rumbolz
Christian Rumbolz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11476389Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.Type: GrantFiled: September 3, 2018Date of Patent: October 18, 2022Assignee: OSRAM OLED GmbHInventors: Michael Huber, Jana Sommerfeld, Martin Herz, Sebastian Hoibl, Christian Rumbolz, Albrecht Kieslich, Bernd Boehm, Georg Rossbach, Markus Broell
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Publication number: 20210126163Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.Type: ApplicationFiled: September 3, 2018Publication date: April 29, 2021Inventors: Michael Huber, Jana Sommerfeld, Martin Herz, Sebastian Hoibl, Christian Rumbolz, Albrecht Kieslich, Bernd Boehm, Georg Rossbach, Markus Broell
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Patent number: 10615572Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.Type: GrantFiled: August 10, 2018Date of Patent: April 7, 2020Assignee: OSRAM OLED GMBHInventors: Sven Gerhard, Christoph Eichler, Christian Rumbolz
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Patent number: 10312664Abstract: A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.Type: GrantFiled: September 21, 2015Date of Patent: June 4, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Rumbolz, Sven Gerhard
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Patent number: 10290997Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.Type: GrantFiled: February 18, 2016Date of Patent: May 14, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Jens Mueller, Christoph Stephan, Robert Walter, Stefan Hartauer, Christian Rumbolz
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Publication number: 20190052055Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.Type: ApplicationFiled: August 10, 2018Publication date: February 14, 2019Inventors: Sven Gerhard, Christoph Eichler, Christian Rumbolz
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Patent number: 9972748Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.Type: GrantFiled: October 29, 2015Date of Patent: May 15, 2018Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christian Leirer, Anton Vogl, Andreas Biebersdorf, Rainer Butendeich, Christian Rumbolz
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Publication number: 20180048122Abstract: A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.Type: ApplicationFiled: February 18, 2016Publication date: February 15, 2018Inventors: Jens Mueller, Christoph Stephan, Robert Walter, Stefan Hartauer, Christian Rumbolz
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Publication number: 20170302058Abstract: A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.Type: ApplicationFiled: September 21, 2015Publication date: October 19, 2017Inventors: Christian Rumbolz, Sven Gerhard
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Publication number: 20160049550Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.Type: ApplicationFiled: October 29, 2015Publication date: February 18, 2016Inventors: Christian Leirer, Anton Vogl, Andreas Biebersdorf, Rainer Butendeich, Christian Rumbolz
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Patent number: 9202967Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.Type: GrantFiled: February 28, 2012Date of Patent: December 1, 2015Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christian Leirer, Anton Vogl, Andreas Biebersdorf, Rainer Butendeich, Christian Rumbolz
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Patent number: 8995490Abstract: An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.Type: GrantFiled: September 7, 2011Date of Patent: March 31, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Nelz, Christian Rumbolz, Stefan Hartauer
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Publication number: 20140061694Abstract: A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.Type: ApplicationFiled: February 28, 2012Publication date: March 6, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christian Leirer, Anton Vogl, Andreas Biebersdorf, Rainer Butendeich, Christian Rumbolz
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Publication number: 20130230068Abstract: An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.Type: ApplicationFiled: September 7, 2011Publication date: September 5, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Nelz, Christian Rumbolz, Stefan Hartauer
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Patent number: 8340146Abstract: The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.Type: GrantFiled: August 27, 2008Date of Patent: December 25, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Christian Rumbolz
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Patent number: 8268659Abstract: A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.Type: GrantFiled: January 21, 2011Date of Patent: September 18, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Christoph Eichler, Volker Härle, Christian Rumbolz, Uwe Strauss
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Publication number: 20110177634Abstract: A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.Type: ApplicationFiled: January 21, 2011Publication date: July 21, 2011Applicant: Osram Opto Semiconductors GmbHInventors: Christoph EICHLER, Volker HÄRLE, Christian RUMBOLZ, Uwe STRAUSS
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Patent number: 7885306Abstract: What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.Type: GrantFiled: July 2, 2007Date of Patent: February 8, 2011Assignee: Osram Opto Semiconductors GmbHInventors: Christoph Eichler, Volker Härle, Christian Rumbolz, Uwe Strauss
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Publication number: 20100278203Abstract: The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.Type: ApplicationFiled: August 27, 2008Publication date: November 4, 2010Inventors: Alfred Lell, Christoph Eichler, Christian Rumbolz
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Publication number: 20080089374Abstract: A semiconductor laser comprising a semiconductor layer sequence (2) comprising an active zone (3) for generating electromagnetic radiation, and an absorber zone for attenuating higher modes. The absorber zone is arranged within the semiconductor layer sequence (2) or adjoins the semiconductor layer sequence (2).Type: ApplicationFiled: October 1, 2007Publication date: April 17, 2008Applicant: OSRAM Opto Semiconductors GmbHInventors: Christoph Eichler, Alfred Lell, Christian Rumbolz