Abstract: A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

Abstract: A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

Abstract: A method for deposition of at least one electrically conducting film on a substrate, wherein the method includes the steps of: selecting a layer of a film material, wherein the layer includes a mask on a front side, and wherein the layer and the mask are one piece; positioning the front side of the layer upon the substrate; applying at least one laser pulse onto a back side of the layer, so as to melt and to vaporize at least parts of the layer such that melt droplets are propelled toward and deposited upon the substrate; and forming the film, wherein at least one slot of the mask limits the distribution of the melt droplets.

Abstract: The invention relates to a method for deposition of at least one electrically conducting film (20) on a substrate (30), comprising the steps: selecting a layer (10) of a film material, wherein the layer (10) comprises a mask (40) on a front side (11) and wherein the layer (10) and the mask (40) are one piece, positioning the front side (11) of the layer (10) upon the substrate (30), applying at least one laser pulse (120) onto a back side (12) of the layer (10), so as to melt and to vaporize at least parts of the layer (10) such that melt droplets (110) are propelled toward and deposited upon said substrate (30), forming the film (20), wherein at least one slot (45) of the mask (40) limits the distribution of said melt droplets (110).