Abstract: A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.

Abstract: A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.

Abstract: A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.

Abstract: A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.

Abstract: Disclosed is an electronic device with a layer succession of the metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) kind. The insulator layer contains or consists of praseodymium titanate. A metal layer or both metal layers contain titanium nitride (TiN), tantalum nitride (TaN) or ruthenium oxide (RuO2) or consist of one of those materials. MIM capacitors for mixed signal and HF applications comprising titanium nitride electrodes and an SiO2/Pr2Ti2O7 layer stack as the dielectric exhibit a high capacitance density of 8 fF/?m2 at the very low VCC of ?40 ppm/V2. The guaranteed operating voltage extrapolated to 10 years is 6 V.

Abstract: A machine for welding rail comprises a rail vehicle with at least one energy generator set, a programmable automatic control unit and a raised chassis disposed between the bogies of the vehicle. The chassis supports at least one welding unit, grinders, two workbench units, each comprising a beam equipped with grippers for gripping, lifting and holding the rails in a working position, a set of grippers at the ends of the vehicle, and position sensors.

Abstract: A process and vehicle for automatically screwing and unscrewing tie screws performed by the vehicle moving continuously along a track. This invention makes it possible to detect and determine the relative position of a tie screw with respect to a tie screw fastening head by optoelectronic devices and to set, if appropriate, the inclination of the tie screw fastening head. The tie screw fastening head is positioned above the tie screw and a tie screw fastening cycle is engaged for each tie screw. The tie screw fastening heads then hop from one work position to another, performing this process.