Abstract: A method may be provided for stimulating the growth of a biomass, which is mixed with a liquid inside a bioreactor, by means of ionising radiation. The following method steps are used: a) exposing a first partial volume of the liquid in the bioreactor to ionising radiation, the first partial volume comprising at most 10% of the liquid volume in the bioreactor; b) mixing the first partial liquid volume, which has been exposed to ionising radiation, with the second partial liquid volume, which has not been exposed to ionising radiation, in the bioreactor; c) repeating method steps a) and b) multiple times, each partial volume of the liquid in the bioreactor being exposed to a total radiation dose of at most 50 Gy on statistical average.

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

Abstract: Chemical compounds that are useful as inhibitors of mechanotransduction in the treatment of pain and modulation of touch perception and topical administration of the compounds described herein in the treatment of pain and modulation of touch perception.

Abstract: A method may be provided for stimulating the growth of a biomass, which is mixed with a liquid inside a bioreactor, by means of ionising radiation. The following method steps are used: a) exposing a first partial volume of the liquid in the bioreactor to ionising radiation, the first partial volume comprising at most 10% of the liquid volume in the bioreactor; b) mixing the first partial liquid volume, which has been exposed to ionising radiation, with the second partial liquid volume, which has not been exposed to ionising radiation, in the bioreactor; c) repeating method steps a) and b) multiple times, each partial volume of the liquid in the bioreactor being exposed to a total radiation dose of at most 50 Gy on statistical average.

Abstract: A method may be provided for inactivating biologically active components in a liquid using low-energy electrons generated by an electron source, the electrons having an acceleration voltage of 25 keV to 300 keV. The method comprises the following steps: a) filling a vessel with a liquid volume; b) applying low-energy electrons to a first partial volume of the liquid filled into the vessel, wherein the first partial volume is a maximum of 10% of the liquid volume in the vessel; c) mixing the first partial volume of the liquid, applied with the low-energy electrons, to the second partial liquid volume in the vessel, which has not been applied with low-energy electrons; d) repeating steps b) and c) several times.

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

Abstract: A device and a method for analyzing objects, including buildings, build environments and/or environment areas is proposed. Image data points of an object are gathered and geo-referenced in order to generate object data points. Properties of the object such as material composition, material state or material properties are determined based spectral characteristics evaluation. Three-dimensional object models are generated in accordance with the evaluation of spectral characteristics.

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

Abstract: The invention relates to a method for inactivating viruses, characterized in that an immunogenic composition or vaccine comprising at least one virus is irradiated with electron beams, said immunogenic composition or vaccine comprising at least one virus (i) being liquid, in particular being a suspension and (ii) comprising at least one viral immunogen, wherein the antigen structure is preferably substantially retained.

Abstract: A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

Abstract: A method for preparing a transplant obtained from animal or human tissue is provided. The transplant is first deposited in a first liquid that comprises at least one substance that initiates and/or activates collagen cross-linking. After removing the transplant from the first liquid, the transplant, now moistened with said first liquid, is exposed to ultraviolet radiation and then to accelerated low-energy electrons.

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

Abstract: Chemical compounds that are useful as inhibitors of mechanotransduction in the treatment of pain and modulation of touch perception and topical administration of the compounds described herein in the treatment of pain and modulation of touch perception.

Abstract: A device and a method for analyzing objects, including buildings, build environments and/or environment areas is proposed. Image data points of an object are gathered and geo-referenced in order to generate object data points. Properties of the object such as material composition, material state or material properties are determined based spectral characteristics evaluation. Three-dimensional object models are generated in accordance with the evaluation of spectral characteristics.

Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

Abstract: A velocity control mechanism is operable to control a vehicle at a maximum forward velocity setting and a maximum rearward velocity setting. The velocity control mechanism includes a processor configured to receive a first signal from an actuator selectively positionable in a velocity control mode in which the vehicle operates at a maximum limited forward velocity less than the maximum forward velocity setting and a maximum limited rearward velocity less than the maximum rearward velocity setting. The first signal represents a desired vehicle forward velocity. The processor also configured to control a velocity of the vehicle in the forward direction based on the first signal and receive a second signal from the actuator. The second signal represents a desired vehicle rearward velocity. The processor further configured to control a velocity of the vehicle in the rearward direction based on the second signal.

Abstract: A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

Abstract: A velocity control mechanism is operable to control a vehicle at a maximum forward velocity setting and a maximum rearward velocity setting. The velocity control mechanism includes a processor configured to receive a first signal from an actuator selectively positionable in a velocity control mode in which the vehicle operates at a maximum limited forward velocity less than the maximum forward velocity setting and a maximum limited rearward velocity less than the maximum rearward velocity setting. The first signal represents a desired vehicle forward velocity. The processor also configured to control a velocity of the vehicle in the forward direction based on the first signal and receive a second signal from the actuator. The second signal represents a desired vehicle rearward velocity. The processor further configured to control a velocity of the vehicle in the rearward direction based on the second signal.

Abstract: A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a hexagonal crystalline phase layer having a first region and a second region, the cubic crystalline phase structure being positioned between the first region and the second region of the hexagonal crystalline phase layer. A source region and a drain region are both positioned in the Group III/V compound semiconductor material. A channel region is in the Group III/V compound semiconductor material. A gate is over the channel region. An optional backside contact can also be formed. A source contact and electrode are positioned to provide electrical contact to the source region. A drain contact and electrode are positioned to provide electrical contact to the drain region. Methods of forming transistors are also disclosed.

Abstract: The invention relates to a method for inactivating viruses, characterized in that an immunogenic composition or vaccine comprising at least one virus is irradiated with electron beams, said immunogenic composition or vaccine comprising at least one virus (i) being liquid, in particular being a suspension and (ii) comprising at least one viral immunogen, wherein the antigen structure is preferably substantially retained.