Patents by Inventor Christiane Elsass
Christiane Elsass has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11749969Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: June 17, 2022Date of Patent: September 5, 2023Assignee: KYOCERA SLD Laser, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 11387630Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: December 1, 2020Date of Patent: July 12, 2022Assignee: KYOCERA SLD Laser, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 11177634Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: May 11, 2020Date of Patent: November 16, 2021Assignee: KYOCERA SLD Laser, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10879674Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: December 30, 2019Date of Patent: December 29, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 10651629Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: January 21, 2019Date of Patent: May 12, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10566766Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.Type: GrantFiled: December 13, 2018Date of Patent: February 18, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass
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Patent number: 10522976Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: August 30, 2018Date of Patent: December 31, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 10199802Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.Type: GrantFiled: October 9, 2017Date of Patent: February 5, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass
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Patent number: 10186841Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: February 2, 2018Date of Patent: January 22, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10069282Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: February 3, 2017Date of Patent: September 4, 2018Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 9887517Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: October 10, 2016Date of Patent: February 6, 2018Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 9831386Abstract: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about ?0.6 degrees in a c-plane direction and up to about ?20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.Type: GrantFiled: June 11, 2014Date of Patent: November 28, 2017Assignee: Soraa, Inc.Inventors: James W. Raring, Christiane Elsass
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Patent number: 9787060Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.Type: GrantFiled: October 20, 2016Date of Patent: October 10, 2017Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass
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Publication number: 20170092810Abstract: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about ?0.6 degrees in a c-plane direction and up to about ?20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.Type: ApplicationFiled: June 11, 2014Publication date: March 30, 2017Inventors: James W. Raring, Christiane Elsass
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Patent number: 9590392Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: October 14, 2015Date of Patent: March 7, 2017Assignee: SORAA LASER DIODE, INC.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 9502859Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.Type: GrantFiled: January 9, 2015Date of Patent: November 22, 2016Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass
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Patent number: 9466949Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: September 17, 2015Date of Patent: October 11, 2016Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 9166372Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: June 27, 2014Date of Patent: October 20, 2015Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 9166374Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: January 23, 2015Date of Patent: October 20, 2015Assignee: SORAA LASER DIODE, INC.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 8971370Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: October 12, 2012Date of Patent: March 3, 2015Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass