Patents by Inventor Christiane Poblenz

Christiane Poblenz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained and strain control regions in optical devices
    Patent number: 11715931
    Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: August 1, 2023
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Christiane Poblenz Elsass
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SURFACES
    Publication number: 20210376573
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: June 9, 2021
    Publication date: December 2, 2021
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Strained and strain control regions in optical devices
    Patent number: 11152765
    Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: October 19, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Christiane Poblenz Elsass
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
    Patent number: 11070031
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: July 20, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Strained and strain control regions in optical devices
    Patent number: 10637210
    Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: April 28, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Christiane Poblenz Elsass
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20200091684
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: September 23, 2019
    Publication date: March 19, 2020
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 10424900
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: September 24, 2019
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Method of strain engineering and related optical device using a gallium and nitrogen containing active region
    Patent number: 10283938
    Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: May 7, 2019
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Christiane Poblenz Elsass
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20190103728
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 4, 2019
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 10090644
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: October 2, 2018
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20180097337
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: November 21, 2017
    Publication date: April 5, 2018
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 9853420
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: December 26, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • LOW VOLTAGE LASER DIODES ON GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20170331255
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: November 29, 2016
    Publication date: November 16, 2017
    Applicant: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Optical device structure using GaN substrates for laser applications
    Patent number: 9722398
    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: August 1, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang
  • Method of strain engineering and related optical device using a gallium and nitrogen containing active region
    Patent number: 9570888
    Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: February 14, 2017
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Christiane Poblenz Elsass
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 9543738
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: January 10, 2017
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Method of strain engineering and related optical device using a gallium and nitrogen containing active region
    Patent number: 9379522
    Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: June 28, 2016
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Christiane Poblenz Elsass
  • Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates
    Publication number: 20160013620
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: September 16, 2010
    Publication date: January 14, 2016
    Applicant: Kaai, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
    Publication number: 20160006217
    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
    Type: Application
    Filed: June 11, 2015
    Publication date: January 7, 2016
    Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang
  • Laser devices having a gallium and nitrogen containing semipolar surface orientation
    Patent number: 9166373
    Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: October 20, 2015
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew Schmidt, Bryan Ellis, Hua Huang, Melvin McLaurin, Christiane Poblenz Elsass