Abstract: The invention relates to a method for drying substrates, particularly semiconductor wafers, after a wet treatment carried out in a treatment liquid. According to the invention, a gas mixture, which consists of a carrier gas and of an active constituent and which reduces the surface tension of the treatment liquid, is applied to the treatment liquid. By producing a relative motion between the substrates and the liquid, the substrates are moved out of the liquid. In order to provide a selectable, preferably constant, isopropyl alcohol (IPA) concentration at any time during the drying process, the concentration of the active constituent of the gas mixture is actively controlled or regulated. Alternatively, the gas mixture is formed, at least in part, by introducing a predetermined amount of carrier gas and a predetermined amount of liquid of the active constituent into an evaporator.