Abstract: The invention relates to a method of manufacturing a semiconductor device by means of a cyclical epitaxial process from a gas phase by which alternate monoatomic layers of the III atom and the V atom of a III-V compound are formed. Layers of very good quality are obtained when atomic hydrogen is conducted to the substrate on which epitaxial growth takes place during a part of each cycle in which the gas phase is free from a compound of the III atom.

Abstract: A semiconductor device for producing electro-magnetic radiation consisting of a radiation-emitting element (LED or laser) and an injection element, which can inject hot charge carriers into the active layer of the radiation-emitting element composed of layers of one conductivity type. With the use of active layers having a large band gap, for example GaN, short-wave light can be generated. According to the invention, the radiation-emitting element and the injection element constitute parts of the same epitaxial layer structure, the active layer being connected to the injection element by means of a semiconductor connection layer having a band gap larger than that of the active layer and that of the adjoining layer of the injection element.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are disclosed for forming an abrupt and accurately positioned p-n junction between a substrate and a substrate-adjoining region. This is achieved in accordance with the present invention by diffusing zinc or cadmium from a surface of the substrate-adjoining region to the substrate, and abruptly limiting or retarding the diffusion of the zinc or cadmium into the substrate near a junction between the substrate and the region. This is accomplished in accordance with the present invention by selecting the net donor concentration in the substrate near the junction to be higher than the concentration of zinc or cadmium at the surface of the substrate-adjoining region.