Patents by Inventor Christin Büchner

Christin Büchner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transferable silica bilayer film
    Patent number: 10763102
    Abstract: The present invention inter alia relates to a supported silica bilayer (SiO2 bilayer) film. In the supported silica bilayer film, the silica bilayer film consists of two atomic layers of corner-sharing SiO4 tetrahedra, forms in itself a chemically saturated structure and contains pores. The silica bilayer film has a first (1) and a second side (2) and is supported on the first side (1) by a removable polymer film. The invention further relates to a process for producing the supported silica bilayer film, a process for transferring a silica bilayer film, a free-standing silica bilayer film, a stack comprising a plurality of silica bilayer films, a filed-effect transistor having a gate oxide comprising the silica bilayer film or a stack thereof and the use of a silica bilayer film.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: September 1, 2020
    Assignee: FRITZ-HABER-INSTITUT DER MAX-PLANCK-GESELLSCHAFT
    Inventors: Hans-Joachim Freund, Markus Heyde, Christin Büchner
  • TRANSFERABLE SILICA BILAYER FILM
    Publication number: 20190103269
    Abstract: The present invention inter alia relates to a supported silica bilayer (SiO2 bilayer) film. In the supported silica bilayer film, the silica bilayer film consists of two atomic layers of corner-sharing SiO4 tetrahedra, forms in itself a chemically saturated structure and contains pores. The silica bilayer film has a first (1) and a second side (2) and is supported on the first side (1) by a removable polymer film. The invention further relates to a process for producing the supported silica bilayer film, a process for transferring a silica bilayer film, a free-standing silica bilayer film, a stack comprising a plurality of silica bilayer films, a filed-effect transistor having a gate oxide comprising the silica bilayer film or a stack thereof and the use of a silica bilayer film.
    Type: Application
    Filed: March 6, 2017
    Publication date: April 4, 2019
    Inventors: Hans-Joachim Freund, Markus Heyde, Christin Büchner