Abstract: A method for wet chemical processing of high-aspect-ratio microstructures and exiting the wet chemical processing while avoiding stiction between the high-aspect-ratio microstructures is provided. The method includes providing a substrate containing etched microstructures, removing etch residue from the substrate using wet chemical processing, rinsing the substrate with an aqueous hydrogen fluoride solution after the wet chemical processing, and drying the substrate using an inert gas.

Abstract: Improved immersion vessel configurations for treatment of precision manufactured devices such as semiconductor wafers are provided. In one aspect, an immersion vessel is provided wherein the sidewalls of the immersion vessel are less than about 10 mm from the major surfaces of the wafer or wafers. In another aspect, an immersion vessel provided with a megasonic transducer has a cleaning zone that is progressively smaller in width from the area proximal to the transducer to the area that is distal from the transducer. In another aspect, an immersion vessel is provided having at least one movable sidewall to provide variable volume capacity of liquid in the vessel. In another aspect, a self-cleaning wafer liquid treatment system is provided having a plurality of cascade chambers.

Abstract: An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer.

Abstract: An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer.

Abstract: Improved immersion vessel configurations for treatment of precision manufactured devices such as semiconductor wafers are provided. In one aspect, an immersion vessel is provided wherein the sidewalls of the immersion vessel are less than about 10 mm from the major surfaces of the wafer or wafers. In another aspect, an immersion vessel provided with a megasonic transducer has a cleaning zone that is progressively smaller in width from the area proximal to the transducer to the area that is distal from the transducer. In another aspect, an immersion vessel is provided having at least one movable sidewall to provide variable volume capacity of liquid in the vessel. In another aspect, a self-cleaning wafer liquid treatment system is provided having a plurality of cascade chambers.