Abstract: A number of different sealed interfaces for power modules are described. In one example, a sealed interface includes a printed circuit board including a contact pad for power conduction to a bus bar of the printed circuit board, a semiconductor module including at least one power transistor, a terminal pin electrically coupled to the power module, and a housing for the power module. The housing includes an open terminal aperture that extends through the housing. The printed circuit board is seated upon the open terminal aperture, to close and seal the open terminal aperture, with the contact pad positioned within the open terminal aperture. The terminal pin contacts the contact pad of the printed circuit board within the open terminal aperture, and the open terminal aperture comprises a transitional feature to abate electric field intensity around an interface between the open terminal aperture and the printed circuit board.

Abstract: A number of different sealed interfaces for power modules are described. In one example, a sealed interface includes a printed circuit board including a contact pad for power conduction to a bus bar of the printed circuit board, a semiconductor module including at least one power transistor, a terminal pin electrically coupled to the power module, and a housing for the power module. The housing includes an open terminal aperture that extends through the housing. The printed circuit board is seated upon the open terminal aperture, to close and seal the open terminal aperture, with the contact pad positioned within the open terminal aperture. The terminal pin contacts the contact pad of the printed circuit board within the open terminal aperture, and the open terminal aperture comprises a transitional feature to abate electric field intensity around an interface between the open terminal aperture and the printed circuit board.

Abstract: In a switching module structure that includes a low-impedance path to ground, such as a parasitic capacitance of an insulating substrate, a further insulating substrate presenting a parasitic capacitance placed in series with the low impedance current path and a connection of a conductive layer to input voltage rails using a single decoupling capacitor or, preferably, a midpoint of the voltage rails formed by a series connection of decoupling capacitors maintains a large portion of common mode (CM) currents which are due to high dV/dt slew rates of SiC and GaN transistors within the switching module.