Patents by Inventor Christina Hutchinson

Christina Hutchinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming features
    Patent number: 10361068
    Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: July 23, 2019
    Assignee: Seagate Technology LLC
    Inventors: Sridhar Dubbaka, Sriram Viswanathan, Christina Hutchinson
  • METHODS OF FORMING FEATURES
    Publication number: 20180114674
    Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.
    Type: Application
    Filed: September 18, 2017
    Publication date: April 26, 2018
    Inventors: Sridhar Dubbaka, Sriram Viswanathan, Christina Hutchinson
  • Methods of forming features
    Patent number: 9767989
    Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: September 19, 2017
    Assignee: Seagate Technology LLC
    Inventors: Sridhar Dubbaka, Sriram Viswanathan, Christina Hutchinson
  • METHODS OF FORMING FEATURES
    Publication number: 20160133440
    Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.
    Type: Application
    Filed: November 11, 2015
    Publication date: May 12, 2016
    Inventors: Sridhar Dubbaka, Sriram Viswanathan, Christina Hutchinson
  • Programmable resistive memory cell with filament placement structure
    Patent number: 8124952
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Grant
    Filed: January 27, 2011
    Date of Patent: February 28, 2012
    Assignee: Seagate Technology LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • Programmable resistive memory cell with filament placement structure
    Patent number: 8124441
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Grant
    Filed: January 27, 2011
    Date of Patent: February 28, 2012
    Assignee: Seagate Technology LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE
    Publication number: 20110121256
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Application
    Filed: January 27, 2011
    Publication date: May 26, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE
    Publication number: 20110117717
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Application
    Filed: January 27, 2011
    Publication date: May 19, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • Programmable resistive memory cell with filament placement structure
    Patent number: 7897955
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Grant
    Filed: November 3, 2008
    Date of Patent: March 1, 2011
    Assignee: Seagate Technology LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas
  • PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE
    Publication number: 20100110759
    Abstract: Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
    Type: Application
    Filed: November 3, 2008
    Publication date: May 6, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Insik Jin, Christina Hutchinson, Richard Larson, Lance Stover, Jaewoo Nam, Andrew Habermas