Patents by Inventor Christina L. Engler

Christina L. Engler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CONDITIONING TREATMENT FOR ALD PRODUCTIVITY
    Publication number: 20230139267
    Abstract: Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.
    Type: Application
    Filed: December 22, 2022
    Publication date: May 4, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Christina L. Engler, Lu Chen
  • Conditioning treatment for ALD productivity
    Patent number: 11566324
    Abstract: Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: January 31, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Christina L. Engler, Lu Chen
  • Doping of metal barrier layers
    Patent number: 11270911
    Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 ?.
    Type: Grant
    Filed: May 6, 2020
    Date of Patent: March 8, 2022
    Assignee: Applied Materials Inc.
    Inventors: Lu Chen, Christina L. Engler, Gang Shen, Feng Chen, Tae Hong Ha, Xianmin Tang
  • DOPING OF METAL BARRIER LAYERS
    Publication number: 20210351072
    Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 ?.
    Type: Application
    Filed: May 6, 2020
    Publication date: November 11, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Lu Chen, Christina L. Engler, Gang Shen, Feng Chen, Tae Hong Ha, Xianmin Tang
  • Conditioning Treatment For ALD Productivity
    Publication number: 20210269916
    Abstract: Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 2, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Christina L. Engler, Lu Chen