Abstract: A perpendicular write head, the write head having an air bearing surface, the write head including a magnetic write pole, wherein at the air bearing surface, the write pole has a trailing side, a leading side that is opposite the trailing side, and first and second sides; side gaps, wherein the side gaps are proximate the write pole along the first and second side edges; and side shields proximate the side gaps, wherein the side shields have gap facing surfaces and include at least one set of alternating layers of magnetic and non-magnetic materials, wherein only one kind of material makes up the gap facing surfaces at the air bearing surfaces.

Abstract: A perpendicular write head, the write head having an air bearing surface, the write head including a magnetic write pole, wherein at the air bearing surface, the write pole has a trailing side, a leading side that is opposite the trailing side, and first and second sides; side gaps, wherein the side gaps are proximate the write pole along the first and second side edges; and side shields proximate the side gaps, wherein the side shields have gap facing surfaces and include at least one set of alternating layers of magnetic and non-magnetic materials, wherein only one kind of material makes up the gap facing surfaces at the air bearing surfaces.

Abstract: A perpendicular write head, the write head having an air bearing surface, the write head including a magnetic write pole, wherein at the air bearing surface, the write pole has a trailing side, a leading side that is opposite the trailing side, and first and second sides; side gaps, wherein the side gaps are proximate the write pole along the first and second side edges; and side shields proximate the side gaps, wherein the side shields have gap facing surfaces and include at least one set of alternating layers of magnetic and non-magnetic materials, wherein only one kind of material makes up the gap facing surfaces at the air bearing surfaces.

Abstract: A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode and a bottom electrode for providing the current through the memory cell, and an alignment element positioned at least between the top electrode and the top surface of the memory element, the alignment element having an electrically conductive body tapering from the top electrode to the top surface of the memory element. Methods for forming the memory cell are also described.

Abstract: A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.

Abstract: A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.

Abstract: A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode and a bottom electrode for providing the current through the memory cell, and an alignment element positioned at least between the top electrode and the top surface of the memory element, the alignment element having an electrically conductive body tapering from the top electrode to the top surface of the memory element. Methods for forming the memory cell are also described.