Patents by Inventor Christina Ye Chen

Christina Ye Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8334151
    Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: December 18, 2012
    Assignee: The Regents of the University of California
    Inventors: Akihiko Murai, Christina Ye Chen, Daniel B. Thompson, Lee S. McCarthy, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra
  • Publication number: 20100187555
    Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
    Type: Application
    Filed: April 1, 2010
    Publication date: July 29, 2010
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akihiko Murai, Christina Ye Chen, Daniel B. Thompson, Lee S. McCarthy, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra
  • Patent number: 7719020
    Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: May 18, 2010
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Akihiko Murai, Christina Ye Chen, Daniel B. Thompson, Lee S. McCarthy, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra
  • Publication number: 20070227582
    Abstract: A low aspect ratio concentrator photovoltaic module has blazed grating surfaces on the light incident and/or reflective light planes that direct optimal wavelengths of light energy to a photo receptor enabling a total internal reflection condition to be achieved with a significantly smaller apex angle. Apex angles can be achieved that are 10° or less depending on the blazed grating angle and groove density, thereby providing a low aspect ratio prism that achieves a dramatic savings in silicon; using only 15 to 20 per cent of the silicon used in a conventional solar module without loss of photovoltaic efficiency. This achieves a significant reduction in the overall material and weight of the prism, making possible a low cost, lightweight, and highly efficient PV module suitable for widespread implementation.
    Type: Application
    Filed: September 26, 2006
    Publication date: October 4, 2007
    Inventors: Peter Zupei Chen, Christina Ye Chen