Abstract: In one implementation, a chamber is selected that accommodates an array of die structures that comprises one or more cavities. An inner chamber of the chamber is maintained at a first temperature. An alkali metal source of the chamber is maintained at a second temperature greater than the first temperature. An outer chamber of the chamber is maintained at a third temperature greater than the first temperature and the second temperature. The one or more cavities of the array of die structures are filled with a portion of the alkali metal source. The one or more cavities of the array of die structures are sealed to comprise the portion of the alkali metal source.

Abstract: In one implementation, a chamber is selected that accommodates an array of die structures that comprises one or more cavities. An inner chamber of the chamber is maintained at a first temperature. An alkali metal source of the chamber is maintained at a second temperature greater than the first temperature. An outer chamber of the chamber is maintained at a third temperature greater than the first temperature and the second temperature. The one or more cavities of the array of die structures are filled with a portion of the alkali metal source. The one or more cavities of the array of die structures are sealed to comprise the portion of the alkali metal source.

Abstract: An apparatus in one example comprises a die structure that comprises a middle layer, a first outside layer, and a second outside layer. The middle layer comprises a cavity that holds an alkali metal, and one of the first outside layer and the second outside layer comprises a channel that leads to the cavity. The middle layer, the first outside layer, and the second outside layer comprise dies from one or more wafer substrates.

Abstract: An apparatus in one example comprises a die structure that comprises a middle layer, a first outside layer, and a second outside layer. The middle layer comprises a cavity that holds an alkali metal, and one of the first outside layer and the second outside layer comprises a channel that leads to the cavity. The middle layer, the first outside layer, and the second outside layer comprise dies from one or more wafer substrates.

Abstract: An apparatus and method is provided for facilitating ionization of a gas medium of a laser gyroscope. The apparatus and method employ a solid state light emitting device as a start aid for the laser gyroscope. The solid state light emitting device has a wavelength at or below a threshold wavelength based on a work function of a cathode coating material to prompt ionization of a gas medium within the laser gyroscope.

Abstract: An integrated optics chip includes an optical waveguide network formed on a surface of an electrooptically active material. The optical waveguide network has an input facet where an optical signal may be input to the optical waveguide network and an output facet where optical signals may be output from the optical waveguide network. One or more trenches is formed in the bottom surface of the surface and arranged to extend into the substrate toward the optical waveguide network to a depth of at least 70% of the thickness. The trenches prevent light rays incident thereon from inside the substrate from propagating to the output facet. In particular, the trenches prevent light scattered at the input facet or from scattering centers in the optical waveguide network from reflecting from the bottom surface of the substrate to the output facet. A cover may be mounted to the top surface of the substrate to provide structural strength to the integrated optics chip.

Abstract: An Integrated Optics Chip with improved performance when exposed to rapidly changing temperature is disclosed. The optic chip or integrated optic chip or MIOC has a top surface, a +Z face and -Z face. The chip is formed from a crystal having a high electro-optic coefficient such as Lithium Niobate. For the purpose of orienting the components to the optic chip to be described, the +Z crystal axis extends outward from the +Z face. An input waveguide formed in the top surface of the chip and orthogonal to the +Z axis receives an optical signal from an input port, passes the signal via a waveguide network, to an output waveguide coupling the waveguide network to an output port. Metalization is applied to the top face of the optic chip to form at least a first and a second rail. The first and second rails are positioned to very closely straddle a portion of the input waveguide.

Abstract: An integrated optics chip with improved performance when exposed to changing temperature is disclosed. The optic chip or integrated optics chip or MIOC has a top surface, a +Z face and -Z face. The integrated optics chip is formed from a crystal substrate having a high electro-optic coefficient such as Lithium Niobate. For the purpose of orienting the components to the optic chip to be described, the +Z crystal axis extends outward from the +Z face, the Z axis being the axis across which a pyroelectric effect is exhibited. The top surface is orthogonal to the Z axis. An input waveguide on the top surface receives an optical signal from an input port, passes the signal via a waveguide network, to an output waveguide coupling the waveguide network to an output port. A portion of the +Z and -Z faces are coated at least partially with a conductive coating.

Abstract: A method for poling a ferroelectric crystal includes heating the crystal to a temperature above its Curie temperature and applying a first selected voltage to the electrodes to apply an electric field to the crystal. The temperature of the crystal is then reduced to a temperature below the Curie temperature of the crystal, and a second electric field having polarity opposite to the polarity of the first electric field is applied to the crystal. Application of the second electric field reduces nonuniformity in ion concentration across the crystal.

Abstract: A ring laser gyroscope has an electrically insulating barrier ring placed between the grounded metal mounting device and the frame, which is formed of a lithium aluminosilicate material that contains mobile ions. The barrier ring prevents migration of the ions from the frame material to the mirrors that are used to direct the counterpropagating waves around the closed path in the ring laser gyroscope.

Abstract: Xenon is isolated from a gaseous mixture containing xenon and krypton. Fline is added to the mixture and the resulting mixture then irradiated with light of about 250-370 nm to form crystals of xenon difluoride. The unreacted gases are removed and the remaining crystals are decomposed, typically by thermal means, to yield xenon and fluorine gas. The xenon gas may be easily isolated by conventional means from the fluorine gas. Krypton may also be easily isolated from the remaining gases by conventional means. The process is particularly applicable to the treatment of offgases from a nuclear reactor or reprocessing plant.

Abstract: A window seal apparatus capable of transmitting infrared radiation for use under high temperature ultra-high vacuum conditions. The apparatus includes a window clamped between an annular rim of a clamp flange and an annular rim of a sealing flange. The rim of the sealing flange includes an annular sealing knob machined therein having an annular indentation in its upper surface. An annular lead gasket is located between the sealing knob and one side of the window. An annular lead gasket having roughened surfaces is positioned adjacent to the other side of the window and a TEFLON gasket is positioned adjacent to the annular rim of the clamp flange. A constant force means is provided for pushing the clamp flange toward the window and the sealing flange thereby producing a seal therebetween. The window is preferably formed from alkali halide material.

Abstract: A method of separating isotopes of hydrogen which comprises subjecting a ture of methane and isotopes of hydrogen in a methane to hydrogen mole ratio from about 1000:1 to about 1:10 to a glow electrical discharge from about 10.sup.-3 to about 50eV per hydrogen bond at a temperature from about 50.degree. K. to about 310.degree. K. and at a pressure from about 0.3 Torr to the pressure at which arcing occurs.