Patents by Inventor Christine Janet Shearer

Christine Janet Shearer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Acoustic resonators
    Patent number: 7327073
    Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: February 5, 2008
    Assignee: Aviza Technologies Limited
    Inventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
  • Acoustic resonators
    Patent number: 7141913
    Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: November 28, 2006
    Assignee: Trikon Technologies Limited
    Inventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
  • Method of forming an acoustic resonator
    Patent number: 6944922
    Abstract: A of forming an acoustic resonator of one inventive aspect includes depositing at least one primer layer, depositing an electrode layer containing Molybdenum on the upper surface of the primer layer, and depositing a layer may piezoelectric material on the uppermost electrode layer. The primer layer may included a generally crystalline material, the upper surface of which has an atomic spacing that matches the atomic spacing of the electrode layer to within about 15% and is not of cubic crystalline form.
    Type: Grant
    Filed: August 11, 2003
    Date of Patent: September 20, 2005
    Assignee: Trikon Technologies Limited
    Inventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
  • Acoustic resonators
    Publication number: 20040061415
    Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.
    Type: Application
    Filed: August 11, 2003
    Publication date: April 1, 2004
    Inventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
  • Deposition of a siloxane containing polymer
    Publication number: 20030012877
    Abstract: An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by further reacting a substance which associates readily with the compound containing the peroxide bonding.
    Type: Application
    Filed: September 6, 2002
    Publication date: January 16, 2003
    Inventors: Steven Carter, Christine Janet Shearer
  • Deposition of a siloxane containing polymer
    Patent number: 6475564
    Abstract: An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.
    Type: Grant
    Filed: July 6, 2000
    Date of Patent: November 5, 2002
    Assignee: Trikon Equipment Limited
    Inventors: Steven Carter, Christine Janet Shearer