Abstract: Traditionally, sol-gel silicates have been reported as being high temperature processable at 400 C to give reasonably dense films that showed good leakage current densities (<5×10?8 A/cm2). Recently we have discovered that we are able to prepare films from particular combinations of sol-gel silicate precursors that cure at 135° C. to 250° C. and give good leakage current density values (9×10?9 A/cm2 to 1×10?10 A/cm2) as well, despite the decrease in processing temperatures. These are some of the first examples of silicates being cured at lower temperatures where the leakage current density is sufficient low to be used as low temperature processed or solution processable or printable gate dielectrics for flexible or lightweight thin film transistors. These formulations may also be used in the planarization of stainless steel foils for thin film transistors and other electronic devices.

Abstract: A photodefinable, organosilicate material having a dielectric constant (?) of 3.5 or below and a method for making and using same, for example, in an electronic device, is described herein. In one aspect, there is provided a composition for preparing a photodefinable material comprising: a silica source capable of being sol-gel processed and having a molar ratio of carbon to silicon within the silica source contained therein of at least 0.5 or greater; a photoactive compound; optionally a solvent; and water provided the composition contains 0.1% by weight or less of an added acid where the acid has a molecular weight of 500 or less.

Abstract: The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors.

Abstract: Surfactant compositions containing compounds according to structure (I), and methods of making them, are disclosed. The compounds provide reduced dynamic and equilibrium surface tension, good solubility, moderate foaming, and good cleaning performance. The methods for making them involve reaction of N-(polyhydroxyalkyl)-alkylamines with dinitriles, dialdehydes, or acetals or hemiacetals of dialdehydes in the presence of hydrogen and a transition metal catalyst. In structure (I), x is an integer from about 1 to 12, R1 and R2 are independently C3-C30 linear alkyl, cyclic alkyl, branched alkyl, alkenyl, aryl, alkylaryl, alkoxyalkyl, and dialkylaminoalkyl; and R3 and R4 are independently hydrogen or a pyranosyl group such as ?-D-glucopyranosyl, ?-D-glucopyranosyl, or ?-D-galactopyranosyl.

Abstract: Poly(arylene ether) polymers are provided having polymer repeat units of the following structure: wherein Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of G1, G2, G3, G4, G5, G6, G7 and G8 is a hydroxyalkyl furan group. Thin films of the polymer and methods of making the polymer are also provided.

Abstract: A dense cleaning fluid for removing contaminants from a substrate and a method comprising same is disclosed herein. In one embodiment of the present invention, the dense cleaning fluid comprises a dense fluid and at least one acetylenic diol or acetylenic alcohol surfactant.

Abstract: A dense cleaning fluid for removing contaminants from an substrate and a method comprising same is disclosed herein. In one embodiment of the present invention, the dense cleaning fluid comprises a dense fluid and at least one acetylenic diol or acetylenic alcohol surfactant.