Abstract: An integrated opto-electronic component includes an amplifying segment coupled to a tuning segment to provide a wavelength tunable laser oscillator function insensitive to the polarization of optical waves that it receives. The amplifying segment is designed to be insensitive to polarization. The tuning segment includes a Bragg grating and a waveguide dimensioned to procure transversely monomode laser emission with rectilinear polarization. Applications include wavelength converters and stabilized gain amplifiers, in particular for optical transmission.

Abstract: A portion of the surface of the first structure is protected by an oxide deposit, and the non-protective layers are etched down to a stop layer. The layers in the etched zone are then built up by molecular beam epitaxy, and one of the built-up layers is given a composition that is different from the composition of the corresponding adjacent layer in the first structure. The method is applicable to fabricating an integrated semiconductor comprising both a laser and a modulator.

Abstract: In a method of manufacturing a planar buried heterojunction laser a semiconductor structure is etched to delimit a laser stripe upstanding on a confinement layer. Lateral layers surround the laser stripe to constitute the planar buried heterojunction laser. They are formed by a non-selective growth method not only at the sides of said stripe but also on top of said stripe to create a parasitic projection. These layers and the projection are subsequently covered with a contact localizing layer. The projection is then removed to form a contact window in the contact localizing layer for localizing an electrical contact on top of the laser stripe. The invention finds a particular application in the manufacture of lasers for fiber optic telecommunication systems.