Patents by Inventor Christine M. Janowiak

Christine M. Janowiak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technique for etching a low capacitance dielectric layer
    Patent number: 6696366
    Abstract: Techniques for etching through a low capacitance dielectric layer in a plasma processing chamber are disclosed. The techniques uses an etch chemistry that includes N2, O2, and a hydrocarbon. By etching the low capacitance dielectric layer with a plasma created out of the etch chemistry, fast etch rates can be obtained while also maintaining profile control and preserving critical dimension of the resultant opening (e.g., via/trench) being etched in the low capacitance layer.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: February 24, 2004
    Assignee: Lam Research Corporation
    Inventors: Ian J. Morey, Susan Ellingboe, Janet M. Flanner, Christine M. Janowiak, John Lang