Abstract: An educational game comprises a planar game board having printed thereon a plurality of images of postal stamps. The educational game further comprises a plurality of player placeholders. The educational game further comprises a plurality of question cards. A first portion of the question cards contain questions of reduced difficulty having associated therewith a first quantity of points. A second portion of the question cards contain questions of intermediate difficulty having associated therewith a second quantity of points. A third portion of the question cards contain questions of increased difficulty having associated therewith a third quantity of points. A portion of the question cards contain questions having subjective answers. A portion of the question cards contain an image of a postal stamp. When a player answers a question correctly, the player's score is incremented by the quantity of points associated with that question.

Abstract: An educational game comprises a planar game board having printed thereon a plurality of images of postal stamps. At least a portion of the postal stamps bear a number. The educational game further comprises a plurality of player placeholders. Each placeholder is configured to be positioned on the numbered stamps. When a player's placeholder is positioned on a numbered stamp, the number corresponds to the player's score. The educational game further comprises a plurality of question cards. A first portion of the question cards contain questions of reduced difficulty having associated therewith a first quantity of points. A second portion of the question cards contain questions of intermediate difficulty having associated therewith a second quantity of points. A third portion of the question cards contain questions of increased difficulty having associated therewith a third quantity of points. A portion of the question cards contain questions having subjective answers.

Abstract: A semiconductor manufacturing process wherein a dielectric layer is plasma etched with selectivity to an underlying and/or overlying stop layer such as a silicon nitride layer. The etchant gas includes a hydrogen-free fluorocarbon reactant such as CxFy gas wherein y/x ≦1.5, an oxygen-containing gas such as O2 and a carrier gas such as Ar. The etch rate of the dielectric layer can be at least 10 times higher than that of the stop layer. Using a combination of C4F6, O2 and Ar, it is possible to obtain dielectric: nitride etch selectivity of greater than 30:1 and nitride cornering etch selectivity of greater than 20:1. The process is useful for etching vias, contacts, and/or trenches of a self-aligned contact (SAC) or self-aligned trench.