Abstract: A process for the clean-up of a crude syngas stream having widely varying composition and particulate load. The process includes quenching the crude syngas stream with a liquid stream to cool the syngas stream and remove particulates, tars and heavier hydrocarbon compounds. The process further includes co-scrubbing the syngas stream to remove both HCl and NH3 from the syngas stream, removing particulate matter from the syngas stream, and removing sulfur from the syngas stream. A syngas treatment system is also disclosed.

Abstract: A syngas stream composition comprising on a dry basis up to about 50,000 mg/Nm3 particulates; 5-39 vol % H2; 5-39 vol % CO; 15-50 vol % CO2; 8-30 vol % N2, 0-2 vol % Argon; and 15-50 vol % moisture on a wet basis. The stream includes a H2/CO ratio that is about 0.3-2 and at least 15 wt % of particulates have an aerodynamic particle diameter of less than or equal to 1 micron. A gasified waste stream and a method for forming a gasified waste stream are also disclosed.

Abstract: A syngas stream composition comprising on a dry basis up to about 50,000 mg/Nm3 particulates; 5-39 vol % H2; 5-39 vol % CO; 15-50 vol % CO2; 8-30 vol % N2; 0-2 vol % Argon; and 15-50 vol % moisture on a wet basis. The stream includes a H2/CO ratio that is about 0.3-2 and at least 15 wt % of particulates have an aerodynamic particle diameter of less than or equal to 1 micron. A gasified waste stream and a method for forming a gasified waste stream are also disclosed.

Abstract: A process for the clean-up of a crude syngas stream having widely varying composition and particulate load. The process includes quenching the crude syngas stream with a liquid stream to cool the syngas stream and remove particulates, tars and heavier hydrocarbon compounds. The process further includes co-scrubbing the syngas stream to remove both HCl and NH3 from the syngas stream, removing particulate matter from the syngas stream, and removing sulfur from the syngas stream. A syngas treatment system is also disclosed.

Abstract: The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n— where Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1?m, and at least one of the aryl radicals is grafted to the backbone of the polymer.

Abstract: A process for preparing a photoimprinted film, a composition for forming a photoimprinted film and a photoimprinted film comprising a dielectric constant of less than about 3.5. The method includes providing a material film having a composition including at least one silica source capable of being sol-gel processed, at least one photoactive compound and at least one solvent; and water. The composition contains less than about 0.1% by weight of an added acid. A mold having mold features is provided. The mold is positioned in sufficient contact with the material film to allow the material to contact at least a portion of the mold features. The material film is then exposed to a radiation source and the film is cured to form a solidified material film. The mold is separated from the solidified material, wherein the material includes film features corresponding to the mold features.

Abstract: A dense cleaning fluid for removing contaminants from a substrate and a method comprising same is disclosed herein. In one embodiment of the present invention, the dense cleaning fluid comprises a dense fluid and at least one acetylenic diol or acetylenic alcohol surfactant.

Abstract: Poly(arylene ether) polymers are provided having polymer repeat units of the following structure: wherein Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of G1, G2, G3, G4, G5, G6, G7 and G8 is a hydroxyalkyl furan group. Thin films of the polymer and methods of making the polymer are also provided.

Abstract: The present invention provides compounds useful as surfactants having formula (1), including isomers thereof: wherein a and b are integers independently selected from about 3 to about 6; x is an integer from about 1 to about 12; (m+n) is from about 1 to about 4; the R1 groups are independently selected from the group consisting of linear, cyclic, and branched alkyl, alkenyl, aryl, and alkylaryl groups having from about C3 to about C30 atoms; and when (m+n) is equal to or greater than 2, each R1 may be independently R2 or R3, wherein R2 and R3 are independently selected from the group consisting of linear, cyclic, and branched alkyl, alkenyl, aryl, and alkylaryl groups having from about C3 to about C30 atoms. The invention also provides a method for reducing surface tension in a waterborne composition or an industrial process by the incorporation of a surfactant having formula (1) and an aqueous composition comprising a surfactant having formula (1).

Abstract: The present invention provides compounds useful as surfactants having formula (1), including isomers thereof: 1