Patents by Inventor Christine Q. Ouyang

Christine Q. Ouyang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method for multi-threshold voltage adjusted silicon germanium alloy devices with same silicon germanium content
    Patent number: 9755078
    Abstract: A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content. A second fin structure having a second strain is located on a surface of a second insulator layer portion. The second fin structure includes a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having the third germanium content, wherein the first germanium content differs from the second germanium content and the third germanium content is greater than the first and second germanium contents, and wherein the first strain differs from the second strain.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: September 5, 2017
    Assignee: International Business Machines Corporation
    Inventors: Pouya Hashemi, Pranita Kerber, Christine Q. Ouyang, Alexander Reznicek
  • STRUCTURE AND METHOD FOR MULTI-THRESHOLD VOLTAGE ADJUSTED SILICON GERMANIUM ALLOY DEVICES WITH SAME SILICON GERMANIUM CONTENT
    Publication number: 20170117413
    Abstract: A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content. A second fin structure having a second strain is located on a surface of a second insulator layer portion. The second fin structure includes a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having the third germanium content, wherein the first germanium content differs from the second germanium content and the third germanium content is greater than the first and second germanium contents, and wherein the first strain differs from the second strain.
    Type: Application
    Filed: October 23, 2015
    Publication date: April 27, 2017
    Inventors: Pouya Hashemi, Pranita Kerber, Christine Q. Ouyang, Alexander Reznicek
  • Structure and method of integrating waveguides, photodetectors and logic devices
    Patent number: 9356163
    Abstract: A method for monolithically integrating semiconductor waveguides, photodetectors and logic devices, i.e., field effect transistors, on a same substrate is provided. The method includes the use of a double semiconductor-on-insulator substrate that includes from bottom to top, a handle substrate, a first insulator layer, a first semiconductor material layer, a second insulator layer, and a second semiconductor material layer. The waveguides, photodetectors and logic devices can be formed in different regions of the substrate and are present atop a first insulator layer of the double semiconductor-on-insulator substrate.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: May 31, 2016
    Assignee: International Business Machines Corporation
    Inventors: Fei Liu, Christine Q. Ouyang, Alexander Reznicek, Jeremy D. Schaub