Abstract: Disclosed herein are unique single stranded DNA oligonucleotide products identified as binding with high affinity and specificity to ovarian tumor cells that may be used in the delivery of therapy to and diagnosis of ovarian cancer.

Abstract: The present invention comprises novel methods, systems, devices, and kits to detect cancer in a patient using HOXC6. Methods and systems are presented herein to (1) determine differential gene expression in cancer tissue (e.g. human epithelial ovarian cancer) using Exon microarray analysis and confirm select gens using qPCR; (2) to correlate transcriptional expression from part 1 with potential protein using IHC; and (3) to confirm specific proteins in sera by ELISA process. In some embodiments, a ELISA kit is provided. More specifically, the inventors developed a cancer screen test based on significant changes in HOXC6 protein in blood serum of ovarian cancer human subjects. Industry available standard protocols and reagents for the detection of HOXC6 in patient blood serum provided highly variable results that would be unsatisfactory for clinical diagnostic testing and screening.

Abstract: Disclosed herein are unique single stranded DNA oligonucleotide products identified as binding with high affinity and specificity to ovarian tumor cells that may be used in the delivery of therapy to and diagnosis of ovarian cancer.

Abstract: An electrical generator has an internal combustion engine and an alternator mounted to the engine and operative to generate electrical power during running of the engine. The alternator and the engine are arranged vertically to reduce the footprint of the electrical generator. The components of the electrical generator are contained within an enclosure defined by a base panel, a set of upright side panels, and a roof panel. When the roof panel is removed, each of the side panels can be independently removed from engagement with the base panel, which allows for easier access to the components of the electrical generator, such as for maintenance, service, and repair. The components are arranged so that cooling and exhaust air flow paths are defined within the enclosure.

Abstract: The present invention comprises novel methods, systems, devices, and kits to detect cancer in a patient using HOXC6. Methods and systems are presented herein to (1) determine differential gene expression in cancer tissue (e.g. human epithelial ovarian cancer) using Exon microarray analysis and confirm select gens using qPCR; (2) to correlate transcriptional expression from part 1 with potential protein using IHC; and (3) to confirm specific proteins in sera by ELISA process. In some embodiments, a ELISA kit is provided. More specifically, the inventors developed a cancer screen test based on significant changes in HOXC6 protein in blood serum of ovarian cancer human subjects. Industry available standard protocols and reagents for the detection of HOXC6 in patient blood serum provided highly variable results that would be unsatisfactory for clinical diagnostic testing and screening.

Abstract: A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.

Abstract: A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.

Abstract: A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.

Abstract: An electrical generator has an internal combustion engine and an alternator mounted to the engine and operative to generate electrical power during running of the engine. The alternator and the engine are arranged vertically to reduce the footprint of the electrical generator. The components of the electrical generator are contained within an enclosure defined by a base panel, a set of upright side panels, and a roof panel. When the roof panel is removed, each of the side panels can be independently removed from engagement with the base panel, which allows for easier access to the components of the electrical generator, such as for maintenance, service, and repair. The components are arranged so that cooling and exhaust air flow paths are defined within the enclosure.

Abstract: A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.

Abstract: A sheet wafer growth system includes a crucible for containing molten material and an afterheater positioned above the crucible. The afterheater has an inner surface disposed toward the crucible. The system further includes one or more shields adjacent to the inner surface of the afterheater. The afterheater and the shield(s) are configured to allow a sheet wafer to pass adjacent to the shield(s). Each shield has two or more substantially different thermally conductive regions such that the two or more regions are configured to control the temperature profile of the growing sheet wafer.

Abstract: A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

Abstract: A hot wire chemical vapor deposition apparatus comprises a vacuum chamber, a substrate support member located in the vacuum chamber, a filament assembly support member located in the vacuum chamber, a precursor gas inlet located in the vacuum chamber and a device for providing a clean portion of at least one filament inside the vacuum chamber without breaking vacuum.

Abstract: A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

Abstract: A method of forming a string for use in a string ribbon crystal provides a refractory metal as a core for the string and forms a first layer of material on the core. A method of growing a ribbon crystal provides a pair of strings. Each string has a refractory metal core. The method further passes the strings through a molten material to grow the ribbon crystal between the pair of strings. A ribbon crystal wafer includes a ribbon crystal material and a pair of strings in the ribbon crystal material. Each string defines an outer edge of the wafer, and each string includes a refractory metal core.

Abstract: A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

Abstract: The invention related to a novel process, novel process steps and novel intermediates useful in the synthesis of pharmaceutically active compounds, especially renin inhibitors, such as Aliskiren. Inter alia, the invention relates to a process for the manufacture of a compound of the formula VI, or a salt thereof, wherein R1, R2, R3 and R? are as defined in the specification, and processes of manufacturing this compound including intermediates.

Abstract: A fuel selection device is provided for allowing a user to connect the cylinders of an internal combustion engine to a user-selected fuel source. The fuel selection device includes a housing that defines a cavity for receiving a moveable selector therein. The selector defining first, second, third and fourth flow paths. The first and second flow paths are used for flowing a first type (e.g., natural gas) of fuel from a fuel source to the cylinders of the engine. The second and fourth flow paths are used for flowing a second type of fuel (e.g., liquid propane vapor) from a fuel source to the cylinder. The selector is movable between a first position wherein first and second cylinders communicate with the first and second flow paths, respectively, and a second position wherein the first and second cylinders communicate with the second flow path and fourth flow paths, respectively.

Abstract: A method of making string for string ribbon crystal provides a substrate having an outer surface, and extrudes refractory material over the substrate. The refractory material substantially covers the outer surface of the substrate. The method then cures the refractory material.

Abstract: A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.