Abstract: System and method of correcting etch and lithographic processes on a photo mask provides for performing an etch proximity correction on a layout design pattern. A first and a second intermediate layout pattern each being based on the etch proximity corrected layout design pattern are provided. An optical proximity correction on the first intermediate layout pattern is performed so as to generate a modified first intermediate layout pattern. Scatterbar generation on the second intermediate layout pattern is performed so as to generate a modified second intermediate layout pattern including scatterbars. Generating a mask layout pattern being based on the first and the second modified intermediate layout pattern is performed.

Abstract: A method of performing proximity correction of a mask layout is used during the generation of a masking structure for performing a processing step. The masking structure includes at least one opening that is delimited by a sidewall and that exposes an area that is to be processed. The method includes the steps of a) determining a value representing a flux of particles to a target portion, wherein the target portion is at least one of the group of a portion of the sidewall and a portion of the uncovered area and wherein the particles are generated during the processing of the area; and b) determining a corrected mask layout dependent on the value determined in step a).

Abstract: A method for producing a final mask layout (20?) avoids imaging errors. A provisional auxiliary mask layout (110) is produced, in particular in accordance with a predefined electrical circuit diagram, and is converted into the final mask layout (20?) with the aid of an OPC method. A main structure (120, 130) of the provisional auxiliary mask layout (110) is assigned optically non-resolvable auxiliary structures (160, 320). Exclusively the optically non-resolvable auxiliary structures (160, 320) are altered in the context of the OPC method, and the main structure (120, 130) itself remains unaltered.

Abstract: A method for producing for a mask a mask layout which avoids aberrations in which a provisional auxiliary mask layout produced, in particular in accordance with a prescribed electrical circuit diagram is converted into the mask layout with the aid of an OPC method. At least two different OPC variants are used in the course of the OPC method by subdividing the original auxiliary mask layout into at least two layout areas and processing each of the layout areas in accordance with one of the at least two OPC variants.