Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: An illumination mean for the inspection of flat substrates is disclosed. The flat substrate includes an upper edge area, a lower edge area and a front area. The illumination means is formed as an annular segment and comprises an opening into which at least the edge area of the flat substrate extends. A plurality of light sources are arranged on an annular segment in a housing. Inside the housing, a reflective element is provided so that the light from the light sources does not impinge perpendicularly on the upper edge area, the lower edge area and the front area of the flat substrate.

Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: A method, a device and the application for the inspection of defects on the edge region of a wafer (6) is disclosed. At least one illumination device (41) illuminates the edge region (6a) of the wafer (6). At least one optical unit (40) is provided, said optical unit (40) being positionable subject to the position of the defect (88) relative to a top surface (30) of the edge of the wafer (6a) or a bottom surface (31) of the edge of the wafer (6a) or a face (32) of the edge of the wafer (6a) for capturing an image of said defect.

Abstract: An illumination mean for the inspection of flat substrates is disclosed. The flat substrate includes an upper edge area, a lower edge area and a front area. The illumination means is formed as an annular segment and comprises an opening into which at least the edge area of the flat substrate extends. A plurality of light sources are arranged on an annular segment in a housing. Inside the housing, a reflective element is provided so that the light from the light sources does not impinge perpendicularly on the upper edge area, the lower edge area and the front area of the flat substrate.

Abstract: A device and a method for scanning the whole surface of a wafer are disclosed. The wafer is deposited on a table movable in the X-coordinate direction and in the Y-coordinate direction. A camera and at least one illumination source are arranged opposite the wafer. The camera is a line camera with a detector row, wherein the length of the detector row is less than the diameter of the wafer.

Abstract: An apparatus for inspecting a wafer, comprising a first illuminator for radiating an illumination beam in a first illumination beam path onto a surface of the wafer and being configured as continuous light source; a second illuminator for radiating an illumination light beam in a second illumination beam path onto a surface of the wafer and being configured as continuous light source; a first detector means defining a first detection beam path; a second detector means defining a second detection beam path, wherein the first and the second detector means have a predetermined spectral sensitivity and detect data of at least an illuminated area moveable in a scanning direction on the surface of the wafer in a plurality of different spectral ranges.

Abstract: An apparatus for inspecting a wafer, comprising at least one illuminator each arranged in an illumination beam path, wherein the at least one illuminator radiates an illumination spot onto a surface of the wafer and being a continuous light source; a detector arranged in a detection beam path has a predetermined spectral sensitivity and records data from the at least one illumination spot from the surface of the wafer; an imager generating a relative movement between the surface of the wafer and the detector, whereby in a meandering movement the illumination spot is passed across the entire surface of the wafer in the scanning direction; and the at least one illumination spot being detected in a plurality of different spectral ranges.

Abstract: The present invention relates to an apparatus and method for automatically inspecting a wafer, having a light source and an illumination optics for illuminating the wafer for inspection, wherein the illumination optics comprises a variable gray filter for adjusting the illumination power.

Abstract: The present invention relates to a method of optically imaging a wafer with a photoresist layer, wherein an imaging area on the surface of the wafer is illuminated with light and a fluorescence image is taken in the imaging area based on the fluorescent light irradiated due to the illumination by the excitation light.