Patents by Inventor Christoff Graimann

Christoff Graimann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Isolation collar nitride liner for DRAM process improvement
    Patent number: 6207494
    Abstract: A method of fabricating a trench cell capacitor can be used in the formation of a DRAM cell. In one embodiment, a trench is formed within a semiconductor substrate. The trench is lined with a dielectric layer, e.g., an ONO layer. After lining the trench, a collar is formed in an upper portion of the trench by forming an oxide layer in the upper portion. A nitride layer on the oxide layer. The trench is then filled with semiconductor material. For example, a semiconductor region can be epitaxially grown to fill the trench.
    Type: Grant
    Filed: March 31, 1999
    Date of Patent: March 27, 2001
    Assignee: Infineon Technologies Corporation
    Inventors: Christoff Graimann, Angelika Schulz, Carlos A. Mazure, Christian Dieseldorff