Abstract: Systems, apparatuses, and methods are provided for dual-pass amplification of laser beams along a common beam path. An example method can include generating a first laser beam and a second laser beam. Subsequently, the example method can include performing dual-pass amplification of the first laser beam and the second laser beam along a common beam path. In some aspects, the first laser beam can include a first wavelength, the second laser beam can include a second wavelength different from the first wavelength.

Abstract: An optical modulator includes an acousto-optic assembly and a thermal management apparatus. The acousto-optic assembly includes: an acousto-optic material; a first side configured to receive an incident light beam; and a second side configured to emit an output light beam based on the incident light beam. The thermal management apparatus includes: a first thermally conductive material in thermal contact with the first side of the acousto-optic assembly; and a second thermally conductive material in thermal contact with the second side of the acousto-optic assembly.

Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.

Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.

Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.

Abstract: An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.