Patents by Inventor Christoph Eichenseer

Christoph Eichenseer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection for RF pins
    Patent number: 12278486
    Abstract: A radio frequency integrated circuit (RFIC) device includes: a first RF input/output (I/O) terminal; a second RF I/O terminal, where the first and the second RF I/O terminals are configured to transmit or receive an RF signal; a capacitor coupled between the first and the second RF I/O terminals; a first coil coupled between the first and the second RF I/O terminals, where the first coil is configured to provide ESD protection to the capacitor during a first ESD event; and a fast transient ESD protection circuit coupled between the first and the second RF I/O terminals, where the fast transient ESD protection circuit is configured to provide ESD protection to the capacitor during a second ESD event different from the first ESD event, where a first rise time of the first ESD event is longer than a second rise time of the second ESD event.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: April 15, 2025
    Assignee: Infineon Technologies AG
    Inventors: Gernot Langguth, Christoph Eichenseer, Stefan Kokorovic
  • Electrostatic Discharge Protection for RF Pins
    Publication number: 20230238797
    Abstract: A radio frequency integrated circuit (RFIC) device includes: a first RF input/output (I/O) terminal; a second RF I/O terminal, where the first and the second RF I/O terminals are configured to transmit or receive an RF signal; a capacitor coupled between the first and the second RF I/O terminals; a first coil coupled between the first and the second RF I/O terminals, where the first coil is configured to provide ESD protection to the capacitor during a first ESD event; and a fast transient ESD protection circuit coupled between the first and the second RF I/O terminals, where the fast transient ESD protection circuit is configured to provide ESD protection to the capacitor during a second ESD event different from the first ESD event, where a first rise time of the first ESD event is longer than a second rise time of the second ESD event.
    Type: Application
    Filed: January 26, 2022
    Publication date: July 27, 2023
    Inventors: Gernot Langguth, Christoph Eichenseer, Stefan Kokorovic