Abstract: The invention relates to a radiation-emitting semiconductor chip having the following features: —a semiconductor body including an active region which, during operation, generates electromagnetic radiation and is arranged in a resonator, —at least one recess in the semiconductor body, which recess completely penetrates the active region, wherein—the recess has a first lateral face and a second lateral face opposite the first lateral face, and—the first lateral face has a first coating which specifies a reflectivity for the electromagnetic radiation of the active region, and/or—the second lateral face has a second coating which specifies a reflectivity for the electromagnetic radiation of the active region. The invention further relates to a method for producing such a semiconductor chip.

Abstract: The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.

Abstract: The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Abstract: In an embodiment an optoelectronic semiconductor component includes a semiconductor body having an n-conducting region, a p-conducting region and an active region configured to emit electromagnetic radiation, the active region arranged between the n-conducting region and the p-conducting region, wherein the p-conducting region comprises a spacer region and a p-doped doping region, wherein the spacer region is arranged between the doping region and the active region and comprises a first spacer layer comprising aluminum, and wherein a vertical extension of the doping region corresponds to at most one third of a vertical extension of the spacer region.

Abstract: A semiconductor laser component is specified, having an n-doped semiconductor layer, an active layer and a p-doped semiconductor layer, the active layer being disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The active layer is designed to generate radiation. The p-doped semiconductor layer includes at least one activated region and at least one unactivated region, with the unactivated region in particular directly bordering an outcoupling facet. The at least one unactivated region has a higher hydrogen fraction and/or a lower electrical conductivity than the activated region. Also specified are methods for producing a semiconductor laser component.

Abstract: A light-emitting diode is specified which includes a semiconductor layer sequence grown in a vertical direction and having an active layer, which is configured and provided to generate light in an active region during operation, and a transparent, at least partly electrically conductive cladding layer structure arranged directly on the semiconductor layer sequence in the vertical direction, wherein the cladding layer structure comprises at least a first cladding layer, a second cladding layer and a third cladding layer.

Abstract: The invention relates to an edge-emitting semiconductor laser diode including a substrate having a first main face and a second main face opposite the first main face, an epitaxial semiconductor layer stack on the first main face of the substrate, wherein the epitaxial semiconductor layer stack includes an active layer for generating electromagnetic radiation, a matching layer arranged on the second main face of the substrate, and an absorption layer applied directly to the matching layer and configured to at least partially absorb the electromagnetic radiation, wherein the substrate and the matching layer are transparent to electromagnetic radiation generated during operation, and the matching layer is configured to increase the absorption of electromagnetic radiation in the absorption layer.

Abstract: The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range.

Abstract: A mirror for a laser is specified, the mirror including a layer stack having at least a first layer containing a first material and at least a second layer containing a second material, the first material having a first refractive index and the second material having a second refractive index, the first refractive index and the second refractive index differing by at least 0.2, and the reflectivity of the mirror in the event of a first exit medium adjoining the mirror, the first exit medium being translucent at least at points to electromagnetic radiation at a specifiable wavelength, differing by less than 10% from the reflectivity of the mirror in the event of a second exit medium adjoining the mirror. the second exit medium differing from the first exit medium and being translucent at least at points to electromagnetic radiation at the specifiable wavelength, for a wavelength range of at least ±20 nm about the specifiable wavelength. Moreover, a laser and a laser component are specified.

Abstract: In at least one embodiment, the semiconductor laser includes a semiconductor layer sequence for generating laser radiation and a transparent substrate. The semiconductor layer sequence has a first facet which is designed for emitting the laser radiation, and a second facet opposite the first facet. The substrate has a first lateral surface on the first facet and a second lateral surface on the second facet. The first lateral surface is orientated at least in part obliquely to the first facet and/or the second lateral surface is orientated at least in part obliquely to the second facet.

Abstract: A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.

Abstract: The invention relates to a component including a semiconductor body and at least one converter layer, wherein the semiconductor body includes at least one active region having an active zone, the active zone being designed to produce electromagnetic radiation. The semiconductor body has at least one vertical recess. A side wall of the recess is formed by a vertically extending facet of the active region, said facet being a radiation passage surface of the active region. The converter layer covers the recess in a top view or at least partly fills the recess. The invention also relates to a method for producing a component.

Abstract: The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.

Abstract: A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0?x?1, 0?y<1 and x+y?1, wherein at least one layer of the layer system includes an aluminum portion x?0.05 or an indium portion y?0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

Abstract: In an embodiment a light-emitting semiconductor chip includes a semiconductor body having a plurality of emitter units, wherein each emitter unit has an active region which is arranged in a resonator having an outcoupling side and a rear side and which is configured to emit light at the outcoupling side along a radiation emission direction, wherein, in each emitter unit, the active region is completely penetrated by at least one recess in the semiconductor body, wherein, in each emitter unit, in a region of the active region the recess has a recess width measured along the radiation emission direction, and wherein recess widths of the emitter units are at least partially different.

Abstract: The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.