Abstract: An electromechanical component and an electromechanical component arrangement for proving the existence of a potential difference which consists of a first electrode, a second electrode and a proving structure. The proving structure is configured to be deflected in the event of there being a potential difference. In addition, an electromechanical component is configured to generate a useful effect. A method implements operation of an electromechanical component for proving the existence of a potential difference, other methods implement operation for performing a functional test on the electromechanical component.

Abstract: An electromechanical component and an electromechanical component arrangement for proving the existence of a potential difference which consists of a first electrode, a second electrode and a proving structure. The proving structure is configured to be deflected in the event of there being a potential difference. In addition, an electromechanical component is configured to generate a useful effect. A method implements operation of an electromechanical component for proving the existence of a potential difference, other methods implement operation for performing a functional test on the electromechanical component.

Abstract: The invention relates to a method with contrast reversal which, inter alia, opens up new areas of application for resists.

Abstract: A lithography apparatus includes a first optical system configured to irradiate a mask with a non-telecentric illumination and a second optical system configured to guide radiation reflected off or transmitted through the mask to a substrate. The mask includes an absorber structure arranged over a non-absorbing surface, wherein the absorber structure includes sidewalls extending in a first direction intersecting a main plane of incidence of the non-telecentric illumination. The sidewall angle of the sidewalls may be at most equal to 90° minus the angle of incidence of the non-telecentric illumination and at least equal to 90° minus the sum of the angle of incidence and a half acceptance angle of the second optical system.

Abstract: A bottom antireflective coating for photolithography at 157 nm or less, where the bottom antireflective coating includes a crosslinkable polymer which contains cinnamic acid derivatives.

Abstract: In a process for creating a pattern in a photoresist layer, a photoresist layer is provided on a substrate. At least selected areas of the photoresist layer are exposed to a radiation beam thereby inducing a change in the chemical composition of the photoresist material in the selectively exposed areas of the photoresist layer. The exposed areas of the photoresist layer are thermally treated using a heated fluid. The photoresist layer is then developed thereby creating the pattern.

Abstract: The invention relates to a method with contrast reversal which, inter alia, opens up new areas of application for resists.

Abstract: A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: A method for forming a lithography mask on a surface region of a wafer is presented. In one embodiment of the method according to the invention time periods from the end of an exposure operation until the beginning of a thermal aftertreatment for the sections of the semiconductor material region are to be identical or approximately identical.

Abstract: A process for the amplification of structured resists utilizes a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The isocyanate group or the thiocyanate group in addition to the nucleophilic group form a reaction pair. One of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers that have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.

Abstract: A photoresist includes a polymer which has acid-cleavable groups in its main chain. The polymer can thus be cleaved by acid into short cleavage products which can be removed from the substrate through the use of a developer. The polymer is completely or partially fluorinated, and consequently has an improved transparency to light of short wavelengths.

Abstract: The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.

Abstract: A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Abstract: A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

Abstract: A bottom antireflective coating for photolithography at 157 nm or less, where the bottom antireflective coating includes a crosslinkable polymer which contains cinnamic acid derivatives.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.